Low reverse leakage current and high surge current Guangdong Hottech US1MF ultra fast recovery diode
Key Attributes
Model Number:
US1MF
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Leakage Current (Ir):
5uA@1kV
Reverse Recovery Time (trr):
75ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
1kV
Voltage - Forward(Vf@If):
1.7V@1A
Current - Rectified:
1A
Mfr. Part #:
US1MF
Package:
SMAF
Product Description
Product Overview
The US1MF (UF1MF) is an ultra-fast recovery rectifier diode designed for high-efficiency applications. It features low reverse voltage leakage current, a glass-passivated junction, and high forward surge current capability. Its low forward voltage drop and ultra-fast recovery time make it ideal for demanding electronic circuits.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
- Origin: China
- Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Maximum Recurrent Peak Reverse Voltage | VRRM | 1000 | V | |
| DC Blocking Reverse Voltage | VR | 1000 | V | |
| RMS Reverse Voltage | VR(RMS) | 700 | V | |
| Maximum Average Forward Rectified Current | IF | 1 | A | |
| Non-Repetitive Peak Forward Surge Current | IFSM | 30 | A | @ t = 8.3ms |
| Reverse Recovery Time | trr | 75 | nS | @ IF=0.5A, IR=1.0A, IRR=0.25A |
| Junction Temperature | TJ | -55 ~ +150 | C | |
| Storage Temperature | TSTG | -55 ~ +150 | C | |
| Forward Voltage | VF | 1.7 | V | IF=1A |
| Reverse Current | IR | 5 | uA | VR=1000V |
| Diode Capacitance | CD | 10 | pF | VR=4VDC, f=1MHz |
| Thermal Resistance Junction To Ambient | RJA | 30 | C/W |
2410122015_Guangdong-Hottech-US1MF_C190804.pdf
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