Voltage Controlled Switching Device GOODWORK SI2300 NChannel Transistor with Low OnState Resistance
Product Overview
The SI2300 is an N-Channel Enhancement Mode Field Effect Transistor designed for voltage-controlled small signal switching. It features a high-density cell design for low RDS(ON), is rugged and reliable, and offers high saturation current capability. This transistor is suitable for applications requiring efficient switching and high current handling in a compact SOT-23 package.
Product Attributes
- Brand: DEMACHEL
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Gate-source leakage current | IGSS | VDS =0V, VGS =12V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =16V, VGS =0V | 1.0 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.5 | 0.7 | 1.0 | V |
| Drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =5.0A | 22 | 27 | m | |
| Drain-source on-state resistance | RDS(on) | VGS =2.5V, ID =4.0A | 35 | 73 | m | |
| Drain-source on-state resistance | RDS(on) | VGS =1.8V, ID =2.0A | m | |||
| Diode forward voltage | VSD | VGS =0V,IS=1A | 0.75 | 1 | V | |
| Forward transconductance | gfs | VDS =5V, ID =3.8A | 4 | S | ||
| Input capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 630 | pF | ||
| Output capacitance | Coss | 164 | pF | |||
| Reverse transfer capacitance | Crss | 137 | pF | |||
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 1.5 | |||
| Turn-on delay time | td(on) | VGS=5V,VDS=10V, RL=1.7,RGEN=6 | 5.5 | ns | ||
| Rise time | tr | 14 | ns | |||
| Turn-off delay time | td(off) | 29 | ns | |||
| Fall time | tf | 10.2 | ns |
2508270929_GOODWORK-SI2300_C21713994.pdf
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