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quality Durable trench MOSFET GOODWORK 80N03NF with low gate charge and excellent electrical characteristics factory
quality Durable trench MOSFET GOODWORK 80N03NF with low gate charge and excellent electrical characteristics factory

Durable trench MOSFET GOODWORK 80N03NF with low gate charge and excellent electrical characteristics

Key Attributes
Model Number: 80N03NF
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
82A
RDS(on):
6.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
41pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
814pF@15V
Pd - Power Dissipation:
37W
Gate Charge(Qg):
8nC@4.5V
Mfr. Part #:
80N03NF
Package:
PDFN5x6-8
Product Description

Product Overview

The 80N03NF is a high cell density Trench MOSFET designed for DC/DC converter applications. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements with 100% EAS guaranteed and full function reliability.

Product Attributes

  • Certifications: RoHS, Green Device Available

Technical Specifications

ParameterSymbolRatingUnitsConditionsMin.Typ.Max.
Drain-Source Breakdown VoltageBVDSS30VVGS=0V , ID=250uA30------
Static Drain-Source On-ResistanceRDS(ON)---mVGS=10V , ID=20A---4.36.2
Static Drain-Source On-ResistanceRDS(ON)---mVGS=4.5V , ID=15A---5.78
Gate Threshold VoltageVGS(th)---VVGS=VDS , ID =250uA1.2---2.5
Drain-Source Leakage CurrentIDSS---uAVDS=24V , VGS=0V , TJ=25------1
Drain-Source Leakage CurrentIDSS---uAVDS=24V , VGS=0V , TJ=55------5
Gate-Source Leakage CurrentIGSS---nAVGS=20V , VDS=0V------100
Forward Transconductancegfs---SVDS=5V , ID=20A---67---
Gate ResistanceRg---VDS=0V , VGS=0V , f=1MHz---1.7---
Total Gate Charge (4.5V)Qg---nCVDS=15V , VGS=4.5V , ID=15A---8---
Gate-Source ChargeQgs---nC---2.4---
Gate-Drain ChargeQgd---nC---3.2---
Turn-On Delay TimeTd(on)---nsVDD=15V , VGS=10V , RG=3.3 ID=15A---7.1---
Rise TimeTr---ns---40---
Turn-Off Delay TimeTd(off)---ns---15---
Fall TimeTf---ns---6---
Input CapacitanceCiss---pFVDS=15V , VGS=0V , f=1MHz---814---
Output CapacitanceCoss---pF---498---
Reverse Transfer CapacitanceCrss---pF---41---
Continuous Source CurrentIS---AVG=VD=0V , Force Current------82
Diode Forward VoltageVSD---VVGS=0V , IS=1A , TJ=25------1
Reverse Recovery Timetrr---nSIF=20A , di/dt=100A/s , TJ=25---15---
Reverse Recovery ChargeQrr---nC---25---
Continuous Drain CurrentID@TC=2582AVGS @ 10V---------
Continuous Drain CurrentID@TC=10053AVGS @ 10V---------
Pulsed Drain CurrentIDM155A---------
Single Pulse Avalanche EnergyEAS38.8mJ---------
Avalanche CurrentIAS34A---------
Total Power DissipationPD@TC=2537W---------
Storage Temperature RangeTSTG-55 to 150---------
Operating Junction Temperature RangeTJ-55 to 150---------
Thermal Resistance Junction-AmbientRJA---/W------50
Thermal Resistance Junction-CaseRJC---/W------4.6

2409302135_GOODWORK-80N03NF_C21713993.pdf

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