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quality Medium Current Zener Diode Guangdong Hottech BZT52C5V1S 200mW Power Dissipation Surface Mount SOD323 factory
quality Medium Current Zener Diode Guangdong Hottech BZT52C5V1S 200mW Power Dissipation Surface Mount SOD323 factory

Medium Current Zener Diode Guangdong Hottech BZT52C5V1S 200mW Power Dissipation Surface Mount SOD323

Key Attributes
Model Number: BZT52C5V1S
Product Custom Attributes
Impedance(Zzt):
60Ω
Zener Voltage(Range):
4.8V~5.4V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
5.1V
Impedance(Zzk):
480Ω
Mfr. Part #:
BZT52C5V1S
Package:
SOD-323
Product Description

Product Overview

The BZT52C2V0S~BZT52C51S series is a range of medium current Zener diodes designed for general-purpose applications. These surface-mount devices offer a 200mW power dissipation and are housed in a compact SOD-323 package, making them suitable for space-constrained designs.

Product Attributes

  • Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
  • Origin: Not specified
  • Material: Molded Plastic (UL Flammability Classification Rating: 94V-0)
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Type Marking Zener Voltage Nom. (V) Zener Voltage Deviation (V) Test Current IZT (mA) Max. Zener Impedance ZZT @ IZT () Reverse Leakage Current IR @ VR (uA) VR (V) Forward Voltage VF @ IF =10mA (V) Power Dissipation PD (mW) Junction Temperature TJ (C) Storage Temperature TSTG (C)
BZT52C2V0S WY 2.0 0.09 5 600 150 1.0 0.9 200 150 -55 ~ +150
BZT52C2V4S WX 2.4 0.2 5 600 50 1.0 0.9 200 150 -55 ~ +150
BZT52C2V7S W1 2.7 0.2 5 600 20 1.0 0.9 200 150 -55 ~ +150
BZT52C3V0S W2 3.0 0.2 5 95 10 1.0 0.9 200 150 -55 ~ +150
BZT52C3V3S W3 3.3 0.2 5 95 5 1.0 0.9 200 150 -55 ~ +150
BZT52C3V6S W4 3.6 0.2 5 90 5 1.0 0.9 200 150 -55 ~ +150
BZT52C3V9S W5 3.9 0.2 5 90 3 1.0 0.9 200 150 -55 ~ +150
BZT52C4V3S W6 4.3 0.3 5 90 3 1.0 0.9 200 150 -55 ~ +150
BZT52C4V7S W7 4.7 0.3 5 80 3 2.0 0.9 200 150 -55 ~ +150
BZT52C5V1S W8 5.1 0.3 5 60 2 2.0 0.9 200 150 -55 ~ +150
BZT52C5V6S W9 5.6 0.4 5 40 1 2.0 0.9 200 150 -55 ~ +150
BZT52C6V2S WA 6.2 0.4 5 10 3 4.0 0.9 200 150 -55 ~ +150
BZT52C6V8S WB 6.8 0.4 5 15 2 4.0 0.9 200 150 -55 ~ +150
BZT52C7V5S WC 7.5 -0.5 ~ +0.4 5 15 1 5.0 0.9 200 150 -55 ~ +150
BZT52C8V2S WD 8.2 0.5 5 15 0.7 5.0 0.9 200 150 -55 ~ +150
BZT52C9V1S WE 9.1 -0.6 ~ +0.5 5 15 0.5 6.0 0.9 200 150 -55 ~ +150
BZT52C10S WF 10 0.6 5 20 0.2 7.0 0.9 200 150 -55 ~ +150
BZT52C11S WG 11 0.6 5 20 0.1 8.0 0.9 200 150 -55 ~ +150
BZT52C12S WH 12 -0.6 ~ +0.7 5 25 0.1 8.0 0.9 200 150 -55 ~ +150
BZT52C13S WI 13 -0.6 ~ +1.1 5 30 0.1 8.0 0.9 200 150 -55 ~ +150
BZT52C15S WJ 15 -1.2 ~ +0.6 5 30 0.1 10.5 0.9 200 150 -55 ~ +150
BZT52C16S WK 16 -0.7 ~ +1.1 5 40 0.1 11.2 0.9 200 150 -55 ~ +150
BZT52C18S WL 18 -1.2 ~ +1.1 5 45 0.1 12.6 0.9 200 150 -55 ~ +150
BZT52C20S WM 20 1.2 5 55 0.1 14.0 0.9 200 150 -55 ~ +150
BZT52C22S WN 22 -1.2 ~ +1.3 5 55 0.1 15.4 0.9 200 150 -55 ~ +150
BZT52C24S WO 24 -1.2 ~ +1.6 5 70 0.1 16.8 0.9 200 150 -55 ~ +150
BZT52C27S WP 27 1.9 2 80 0.1 18.9 0.9 200 150 -55 ~ +150
BZT52C30S WQ 30 2 2 80 0.1 21.0 0.9 200 150 -55 ~ +150
BZT52C33S WR 33 2 2 80 0.1 23.1 0.9 200 150 -55 ~ +150
BZT52C36S WS 36 2 2 90 0.1 25.2 0.9 200 150 -55 ~ +150
BZT52C39S WT 39 2 2 130 0.1 27.3 0.9 200 150 -55 ~ +150
BZT52C43S WU 43 3 5 100 0.1 32 0.9 200 150 -55 ~ +150
BZT52C47S WV 47 3 5 100 0.1 35 0.9 200 150 -55 ~ +150
BZT52C51S WW 51 3 5 100 0.1 38 0.9 200 150 -55 ~ +150
Parameter Symbol Value Unit
Forward Voltage @ IF =10mA VF 0.9 V
Power Dissipation PD 200 mW
Thermal Resistance From Junction To Ambient RJA 625 C/W
Junction Temperature TJ 150 C
Storage Temperature TSTG -55 ~ +150 C

2410010132_Guangdong-Hottech-BZT52C5V1S_C5190169.pdf

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