Power Field Effect Transistor Goodwork AO4606 With Avalanche And Commutation Mode For Fast Switching
Key Attributes
Model Number:
AO4606
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
32pF@25V
Pd - Power Dissipation:
2.5W
Output Capacitance(Coss):
55pF
Input Capacitance(Ciss):
345pF@25V
Gate Charge(Qg):
4.1nC@4.5V
Mfr. Part #:
AO4606
Package:
SOP-8
Product Description
Product Overview
The AO4606 is an N+P dual channel enhancement mode power field effect transistor utilizing advanced trench DMOS technology. This technology is optimized for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. It is well-suited for high efficiency, fast switching applications, including 4.5V gate drive scenarios.
Product Attributes
- Brand: AO
- Type: N+P dual Channel enhancement mode power field effect transistors
- Technology: Trench DMOS
- Certifications: Green Device Available
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| AO4606 (N-CH) | BVDSS | VGS=0V , ID=250uA | 30 | V | ||
| IDSS | VDS=30V , VGS=0V , TJ=25 | 1 | uA | |||
| IDSS | VDS=24V , VGS=0V , TJ=125 | 10 | uA | |||
| IGSS | VGS=20V , VDS=0V | 100 | nA | |||
| RDS(ON) | VGS=10V , ID=6A | 15 | m | |||
| RDS(ON) | VGS=4.5V , ID=5A | 21 | m | |||
| VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V | |
| gfs | VDS=10V , ID=3A | 3 | S | |||
| Qg | VDS=15V , VGS=4.5V , ID=8A | 4.1 | nC | |||
| Ciss | VDS=25V , VGS=0V , F=1MHz | 345 | pF | |||
| AO4606 (P-CH) | BVDSS | VGS=0V , ID=-250uA | -30 | V | ||
| IDSS | VDS=-30V , VGS=0V , TJ=25 | -1 | uA | |||
| IDSS | VDS=-24V , VGS=0V , TJ=125 | -10 | uA | |||
| IGSS | VGS=20V , VDS=0V | 100 | nA | |||
| RDS(ON) | VGS=-10V , ID=-5A | 45 | m | |||
| RDS(ON) | VGS=-4.5V , ID=-3A | 65 | m | |||
| VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V | |
| gfs | VDS=-10V , ID=-3A | 3.5 | S | |||
| Qg | VDS=-15V , VGS=-4.5V , ID=-3A | 5.1 | nC | |||
| Ciss | VDS=-15V , VGS=0V , F=1MHz | 560 | pF | |||
| General | PD | (TC=25) | 2.5 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 125 | |||
| RJA | Thermal Resistance Junction to ambient | 62.5 | /W |
2507011715_GOODWORK-AO4606_C49274008.pdf
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