Power Management P Channel MOSFET Guangdong Hottech AO3401 with High Continuous Drain Current Rating
Key Attributes
Model Number:
AO3401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
75mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 P-Channel
Input Capacitance(Ciss):
954pF
Output Capacitance(Coss):
115pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
AO3401
Package:
SOT-23
Product Description
AO3401 P-Channel MOSFET
The AO3401 is a P-Channel MOSFET designed with a high-density cell structure for extremely low RDS(ON). It offers exceptional on-resistance and maximum DC current capability, making it suitable for various power management applications.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
- Type: Plastic-Encapsulated MOSFET
- Package: SOT-23
- Marking: A19T
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | -4.2 | A | |||
| Power Dissipation | PD | (Ta=25 unless otherwise noted) | 350 | mW | ||
| Thermal Resistance from Junction to Ambient (t<5s) | RJA | 357 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics (TA=25C, unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-24V,VGS = 0V | -1 | A | ||
| Gate-source leakage current | IGSS | VGS =12V, VDS = 0V | 100 | nA | ||
| On Characteristics | ||||||
| Drain-source on-resistance | RDS(on) | VGS =-10V, ID =-4.2A | 65 | m | ||
| VGS =-4.5V, ID =-4A | 75 | m | ||||
| VGS =-2.5V,ID=-1A | 90 | m | ||||
| Forward tranconductance | gFS | VDS =-5V, ID =-5A | 7 | S | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.7 | -1.3 | V | |
| Dynamic Characteristics (note 2) | ||||||
| Input capacitance | Ciss | 954 | pF | |||
| Output capacitance | Coss | 115 | pF | |||
| Reverse transfer capacitance | Crss | VDS =-15V,VGS =0V,f =1MHz | 77 | pF | ||
| Switching Characteristics (note 2) | ||||||
| Turn-on delay time | td(on) | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 6.3 | ns | ||
| Turn-on rise time | tr | 3.2 | ns | |||
| Turn-off delay time | td(off) | 38.2 | ns | |||
| Turn-off fall Time | tf | 12 | ns | |||
| Diode Characteristics and Maximum Ratings | ||||||
| Diode forward voltage | VSD | IS=-1A,VGS=0V (note 1) | -1 | V | ||
Notes:
1. Pulse Test: Pulse width300s, duty cycle2%.
2. These parameters have no way to verify.
2410121928_Guangdong-Hottech-AO3401_C181091.pdf
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