Low RDS ON transistor GOODWORK AO3400A N channel enhancement mode for dependable electronic applications
Key Attributes
Model Number:
AO3400A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
52mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.05nF
Pd - Power Dissipation:
1.5W
Mfr. Part #:
AO3400A
Package:
SOT-23-3L
Product Description
Product Overview
The AO3400A is a voltage-controlled, N-Channel Enhancement Mode Field Effect Transistor designed for high-density cell applications. It offers low RDS(ON), making it suitable for small signal switching applications. Key features include a rugged and reliable design with high saturation current capability, making it a dependable component for various electronic circuits.
Product Attributes
- Marking Type number: AO3400A
- Marking code: AO9T
- Package: SOT-23-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| IDSS | VDS =24V,VGS = 0V | 1 | A | |||
| IGSS | VGS =12V, VDS = 0V | 100 | nA | |||
| VGS(th) | VDS =VGS, ID =250A | 0.7 | 1.4 | V | ||
| On characteristics | RDS(on) | VGS =10V, ID =5.8A | 28 | m | ||
| RDS(on) | VGS =4.5V, ID =5A | 38 | m | |||
| RDS(on) | VGS =2.5V,ID=4A | 52 | m | |||
| Forward tranconductance | gFS | VDS =5V, ID =5A | 8 | S | ||
| Dynamic Characteristics | Ciss | VDS =15V,VGS =0V,f =1MHz | 1050 | pF | ||
| Coss | VDS =15V,VGS =0V,f =1MHz | 99 | pF | |||
| Crss | VDS =15V,VGS =0V,f =1MHz | 77 | pF | |||
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 3.6 | |||
| Switching Characteristics | td(on) | VGS=10V,VDS=15V, RL=2.7,RGEN=3 | 5 | ns | ||
| tr | VGS=10V,VDS=15V, RL=2.7,RGEN=3 | 7 | ns | |||
| td(off) | VGS=10V,VDS=15V, RL=2.7,RGEN=3 | 40 | ns | |||
| tf | VGS=10V,VDS=15V, RL=2.7,RGEN=3 | 6 | ns | |||
| Drain-source diode characteristics | VSD | IS=1A,VGS=0V | 1 | V | ||
| Maximum ratings | VDS | 30 | V | |||
| VGS | 12 | V | ||||
| ID | Ta=25 | 5.8 | A | |||
| IDM | Drain Current-Pulsed (note 1) | 30 | A | |||
| PD | Power Dissipation | Ta=25 | 1.5 | W | ||
| RJA | Thermal Resistance from Junction to Ambient (note 2) | 357 | /W | |||
| TJ, TSTG | Junction Temperature, Storage Temperature | -55~+150 |
2410121546_GOODWORK-AO3400A_C21713968.pdf
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