High voltage NPN transistor High Diode MMBTA92 in SOT-23 package offering performance for electronics
Key Attributes
Model Number:
MMBTA92
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
250nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
50MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-
Mfr. Part #:
MMBTA92
Package:
SOT-23
Product Description
Product Overview
The MMBTA92 is a high voltage NPN transistor in a SOT-23 package, designed for various electronic applications. It offers excellent breakdown voltages and good current gain characteristics.
Product Attributes
- Brand: High Diode Semiconductor
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC= -100A, IE=0 | -300 | V | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC= -1mA, IB=0 | -300 | V | |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE= -100A, IC=0 | -5 | V | |
| Collector Cut-off Current | ICBO | VCB=-200V, IE=0 | -0.25 | A | |
| Emitter Cut-off Current | IEBO | VEB= -5V, IC=0 | -0.1 | A | |
| DC Current Gain | hFE(1) | VCE= -10V, IC= -1mA | 60 | ||
| DC Current Gain | hFE(2) | VCE= -10V, IC=-10mA | 100 | 200 | |
| DC Current Gain | hFE(3) | VCE= -10V, IC=-30mA | 60 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-20mA, IB= -2mA | -0.2 | V | |
| Base-Emitter Saturation Voltage | VBE(sat) | IC= -20mA, IB= -2mA | -0.9 | V | |
| Transition Frequency | fT | VCE=-20V, IC= -10mA, f=30MHz | 50 | MHz |
2410121317_High-Diode-MMBTA92_C466649.pdf
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