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quality Electronic Components Guangdong Hottech BC847CW NPN Bipolar Transistor for Surface Mount Applications factory
quality Electronic Components Guangdong Hottech BC847CW NPN Bipolar Transistor for Surface Mount Applications factory

Electronic Components Guangdong Hottech BC847CW NPN Bipolar Transistor for Surface Mount Applications

Key Attributes
Model Number: BC847CW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
100MHz
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BC847CW
Package:
SOT-323
Product Description

Product Overview

The BC847W is an NPN bipolar transistor designed for surface mount applications. It offers excellent hFE linearity and high collector current capabilities, making it a complementary part to the BC857W. This device is suitable for various electronic circuits requiring reliable transistor performance.

Product Attributes

  • Brand: HOTTECH
  • Origin: GUANGDONG
  • Case Material: Molded Plastic
  • Flammability Classification: UL 94V-0
  • Complementary To: BC857W

Technical Specifications

ParameterSymbolValueUnitConditions
Collector-Base VoltageVCBO50V
Collector-Emitter VoltageVCEO45V
Emitter-Base VoltageVEBO6V
Collector CurrentIC100mA
Collector Power DissipationPC150mWTA = 25C
Thermal Resistance Junction To AmbientRJA833C/W
Junction TemperatureTJ150C
Storage TemperatureTSTG-55 ~+150C
Collector-base breakdown voltageV(BR)CBO50VIC=10uAIE=0
Collector-emitter breakdown voltageV(BR)CEO45VIC=10mAIB=0
Emitter-base breakdown voltageV(BR)EBO6VIE=1uAIC=0
Collector cut-off currentICBO15nAVCB=30V, IE=0
DC current gain (hFE)hFE110VCE=5V, IC=2mA
DC current gain (hFE)hFE800VCE=5V, IC=2mA
DC current gain (hFE)hFE150VCE=5V, IC=10uA
Collector-emitter saturation voltageVCE(sat)0.25VIC=10mAIB=0.5mA
Collector-emitter saturation voltageVCE(sat)0.6VIC=100mAIB=5mA
Base-emitter saturation voltageVBE(sat)0.7VIC=10mAIB=0.5mA
Base-emitter saturation voltageVBE(sat)0.9VIC=100mAIB=5mA
Base-emitter voltageVBE(ON)0.58 - 0.77VVCE=5V, IC=2mA to 10mA
Transition frequencyfT100MHzVCE=5V,IC=10mA,f=100MHz
Collector output capacitanceCob8pFVCB=10V, f=1MHz
Noise figureNF10dBVCE=5V, IC=0.2mA,RS=2k f=1KMHz,BW=200Hz

2507111630_Guangdong-Hottech-BC847CW_C49238176.pdf

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