HL Haolin Elec D965 NPN Plastic Encapsulated Transistor Suitable for Various Electronic Applications

Key Attributes
Model Number: D965
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
750mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
5A
Collector - Emitter Voltage VCEO:
22V
Operating Temperature:
-
Mfr. Part #:
D965
Package:
TO-92
Product Description

Product Overview

The D965 is a NPN type plastic-encapsulated transistor in a SOT-89-3L package. It features low collector-emitter saturation voltage, large collector power dissipation and current, and a mini power type package. This transistor is suitable for various electronic applications requiring efficient power handling and signal amplification.

Product Attributes

  • Marking: 965
  • Brand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD
  • Package: SOT-89-3L
  • Material: Plastic-Encapsulate

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=100A,IE=040V
Collector-emitter breakdown voltageV(BR)CEOIC=1mA,IB=020V
Emitter-base breakdown voltageV(BR)EBOIE=10A,IC=07V
Collector cut-off currentICBOVCB=10V,IE=00.1A
Emitter cut-off currentIEBOVEB=7V,IC=00.1A
DC current gainhFE(1)VCE=2V, IC=1mA200
hFE(2)VCE=2V, IC=500mA230800
hFE(3)VCE=2V, IC=2A150
Collector-emitter saturation voltageVCE(sat)IC=3A,IB=0.1A1V
Transition frequencyfTVCE=6V,IC=50mAf=200MHz150MHz
Collector output capacitanceCobVCB=20V, IE=0, f=1MHz50pF
Collector-Base VoltageVCBO40V
Collector-Emitter VoltageVCEO20V
Emitter-Base VoltageVEBO7V
Collector CurrentIC5A
Collector Power DissipationPC750mW
Thermal Resistance Junction To AmbientRJA167/W
Junction TemperatureTj150
Storage TemperatureTstg-55+150

2410311238_HL-Haolin-Elec-D965_C237242.pdf

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