HL Haolin Elec D965 NPN Plastic Encapsulated Transistor Suitable for Various Electronic Applications
Product Overview
The D965 is a NPN type plastic-encapsulated transistor in a SOT-89-3L package. It features low collector-emitter saturation voltage, large collector power dissipation and current, and a mini power type package. This transistor is suitable for various electronic applications requiring efficient power handling and signal amplification.
Product Attributes
- Marking: 965
- Brand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-89-3L
- Material: Plastic-Encapsulate
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 20 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A,IC=0 | 7 | V | ||
| Collector cut-off current | ICBO | VCB=10V,IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=7V,IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=2V, IC=1mA | 200 | |||
| hFE(2) | VCE=2V, IC=500mA | 230 | 800 | |||
| hFE(3) | VCE=2V, IC=2A | 150 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=3A,IB=0.1A | 1 | V | ||
| Transition frequency | fT | VCE=6V,IC=50mAf=200MHz | 150 | MHz | ||
| Collector output capacitance | Cob | VCB=20V, IE=0, f=1MHz | 50 | pF | ||
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 20 | V | |||
| Emitter-Base Voltage | VEBO | 7 | V | |||
| Collector Current | IC | 5 | A | |||
| Collector Power Dissipation | PC | 750 | mW | |||
| Thermal Resistance Junction To Ambient | RJA | 167 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 |
2410311238_HL-Haolin-Elec-D965_C237242.pdf
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