Surface Mount Schottky Diode Guangdong Hottech SS56B designed for low voltage inverter applications
Key Attributes
Model Number:
SS56B
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
200uA@60V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
60V
Voltage - Forward(Vf@If):
850mV@5A
Current - Rectified:
5A
Mfr. Part #:
SS56B
Package:
SMB
Product Description
Product Overview
The SS52B-SS520B series are Schottky Barrier Diodes in a small Surface Mount device (SMB) package. They offer low power loss, high efficiency, and high forward surge current capability. These diodes are designed for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Origin: Not specified
- Material: Molded Plastic (UL flammability Classification Rating: 94V-0)
- Color: Not specified
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | SS52B | SS53B | SS54B | SS55B | SS56B | SS58B | SS510B | SS515B | SS520B | Unit | Conditions |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | 20 | 30 | 40 | 50 | 60 | 80 | 100 | 150 | 200 | V | |
| DC Reverse Voltage | VR | 20 | 30 | 40 | 50 | 60 | 80 | 100 | 150 | 200 | V | |
| RMS Reverse Voltage | VRMS | 14 | 21 | 28 | 35 | 42 | 56 | 70 | 105 | 140 | V | |
| Non-Repetitive Peak Forward Surge Current @ t = 8.3 ms | IFSM | 150 | A | @ t = 8.3 ms | ||||||||
| Mean rectifying current | IF | 5.0 | A | |||||||||
| Thermal Resistance | RJA | 60 | C/W | Junction to ambient, P.C.B. mounted with 0.27" x 0.27" copper pad areas | ||||||||
| Thermal Resistance | RJL | 20 | C/W | Junction to lead, P.C.B. mounted with 0.27" x 0.27" copper pad areas | ||||||||
| Junction Temperature | TJ | -55 ~+125 | C | |||||||||
| Storage Temperature | TSTG | -55 ~+150 | C | |||||||||
| Forward voltage | VF | 0.55 | 0.70 | 0.85 | 0.95 | V | IF=5A | |||||
| Reverse current | IR | 0.5 | 0.2 | mA | TA=25C, V=VR | |||||||
| Reverse current | IR | 20 | 10 | mA | TA=100C | |||||||
| Junction capacitance | CJ | 500 | 350 | pF | V=4V,f=1MHZ | |||||||
2410122022_Guangdong-Hottech-SS56B_C5190161.pdf
Related Products
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
