Low noise high gain transistor GUOXIN JIAPIN SEMICONDUCTOR FC1405 suitable for VHF UHF broadband amplifier and RF
Key Attributes
Model Number:
FC1405
Product Custom Attributes
Emitter-Base Voltage(Vebo):
1.5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
100mW
Transition Frequency(fT):
9GHz
Type:
NPN
Current - Collector(Ic):
50mA
Collector - Emitter Voltage VCEO:
9V
Mfr. Part #:
FC1405
Package:
SOT-323
Product Description
Product Description
The FC1405 is an ultra-high frequency, low-noise NPN silicon epitaxial bipolar transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It features high power gain, low noise characteristics, and a large dynamic range. Utilizing an ultra-small SOT-323 package, it is particularly suitable for high-density surface mount applications. It is primarily used in VHF and UHF high-frequency, low-noise broadband amplifiers.
Product Attributes
- Brand: (Guo Xin Jia Pin SEMICONDUTOR)
- Origin: China (implied by manufacturer name and language)
- Material: Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Typical Value (Units) | Test Conditions | Min (mm) | Max (mm) | Package | Ordering Information | HFE Bin | Product Number | Standard Packaging |
| High Gain (|S21e|) | |S21e| | 13.5 dB | VCE=5V, IC=20mA, f=0.9GHz | FC1405 | 3K/Reel | |||||
| Low Noise (NF) | NF | 1.6 dB | VCE=5V, IC=5mA, f=0.9GHz | B, C, D | FC1405 | 3K/Reel | ||||
| Gain Bandwidth Product (fT) | fT | 9 GHz | VCE=5V, IC=20mA, f=0.9GHz | FC1405 | 3K/Reel | |||||
| Collector-Base Breakdown Voltage | VCBO | 15 V | IC=1.0A | FC1405 | 3K/Reel | |||||
| Collector-Emitter Breakdown Voltage | VCEO | 9 V | FC1405 | 3K/Reel | ||||||
| Emitter-Base Breakdown Voltage | VEBO | 1.5 V | FC1405 | 3K/Reel | ||||||
| Collector Current | IC | 50 mA | FC1405 | 3K/Reel | ||||||
| Power Dissipation | PC | 100 mW | FC1405 | 3K/Reel | ||||||
| Junction Temperature | Tj | 150 | FC1405 | 3K/Reel | ||||||
| Storage Temperature | Tstg | -65 ~ +150 | FC1405 | 3K/Reel | ||||||
| DC Current Gain (hFE) | hFE | 90-130 (Bin B), 120-180 (Bin C), 170-250 (Bin D) | VCE=5V, IC=20mA | SOT-323 | FCB (Bin B), FCH (Bin C), FCD (Bin D) | B, C, D | FC1405 | 3K/Reel | ||
| Collector-Base Leakage Current | ICBO | 0.1 A | VCB=10V | FC1405 | 3K/Reel | |||||
| Emitter-Base Leakage Current | IEBO | 0.1 A | VEB=1V | FC1405 | 3K/Reel | |||||
| Output Feedback Capacitance | Cre | 0.65 - 1.0 pF | VCB=10V, IE=0mA, f=1MHz | FC1405 | 3K/Reel | |||||
| SOT-323 Pinout | 1:Emitter, 2:Base, 3:Collector | FC1405 | 3K/Reel | |||||||
| SOT-323 Dimensions | A | 0.200 | 0.200 | 0.400 | SOT-323 | FC1405 | 3K/Reel | |||
| B | 1.150 | 1.150 | 1.350 | FC1405 | 3K/Reel | |||||
| C | 2.150 | 2.150 | 2.450 | FC1405 | 3K/Reel | |||||
| D | 0.650 | 0.650 | FC1405 | 3K/Reel | ||||||
| G | 1.200 | 1.200 | 1.400 | FC1405 | 3K/Reel | |||||
| H | 2.000 | 2.000 | 2.200 | FC1405 | 3K/Reel | |||||
| K | 0.900 | 0.900 | 1.100 | FC1405 | 3K/Reel | |||||
| L | 0.525 | 0.525 | FC1405 | 3K/Reel | ||||||
| M | 0.080 | 0.080 | 0.150 | FC1405 | 3K/Reel |
2410121233_GUOXIN-JIAPIN-SEMICONDUCTOR-FC1405_C2992554.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
