Surface mount SOT 89 transistor GUOXIN JIAPIN SEMICONDUCTOR FC3357 low noise high power gain component
Key Attributes
Model Number:
FC3357
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2.5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.2W
Transition Frequency(fT):
6.5GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
12V
Mfr. Part #:
FC3357
Package:
SOT-89
Product Description
Product Description
The FC3357 is a high-frequency, low-noise NPN silicon epitaxial bipolar transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It features high power gain, a low noise figure, a large dynamic range, and ideal current characteristics. Packaged in an SOT-89 surface-mount package, it is primarily used in VHF, UHF, and CATV high-frequency broadband low-noise amplifiers.
Product Attributes
- Brand: Guo Xin Jia Pin Semiconductor Co., Ltd.
- Origin: China
- Material: NPN Silicon Epitaxial Bipolar
- Package: SOT-89
Technical Specifications
| Parameter | Symbol | Min | Typical | Max | Unit | Test Conditions |
| Collector-Base Breakdown Voltage | VCBO | 20 | V | IC=1.0A | ||
| Collector-Emitter Breakdown Voltage | VCEO | 12 | V | IC=100A | ||
| Emitter-Base Breakdown Voltage | VEBO | 2.5 | V | |||
| Collector Current | IC | 100 | mA | |||
| Power Dissipation | PC | 1200 | mW | *with heatsink | ||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -65 | +150 | |||
| Collector-Base Leakage Current | ICBO | 0.1 | A | VCB=10V | ||
| Emitter-Base Leakage Current | IEBO | 0.1 | A | VEB=1V | ||
| DC Current Gain | hFE | 60 | 150 | 250 | VCE=10V,IC=20mA | |
| Gain Bandwidth Product | fT | 6.5 | GHz | VCE=10V,IC=20mA,f=1GHz | ||
| Insertion Power Gain | |S21e| | 9 | 10 | dB | VCE=10V,IC=20mA,f=1GHz | |
| Output Feedback Capacitance | Cre | 0.65 | pF | VCB=10V,IE=0mA,f=1MHz |
2204211700_GUOXIN-JIAPIN-SEMICONDUCTOR-FC3357_C2992549.pdf
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