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quality Hangzhou Silan Microelectronics SVF840F N Channel MOSFET for in PWM Motor Drivers and Power Converters factory
quality Hangzhou Silan Microelectronics SVF840F N Channel MOSFET for in PWM Motor Drivers and Power Converters factory

Hangzhou Silan Microelectronics SVF840F N Channel MOSFET for in PWM Motor Drivers and Power Converters

Key Attributes
Model Number: SVF840F
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
680mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.69pF
Number:
1 N-channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
904pF
Pd - Power Dissipation:
49W
Gate Charge(Qg):
14.7nC@10V
Mfr. Part #:
SVF840F
Package:
TO-220
Product Description

Silan Microelectronics SVF840F/D/S/MJ/FD N-CHANNEL MOSFET

The SVF840F/D/S/MJ/FD is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology is optimized for reduced on-state resistance, superior switching performance, and enhanced high energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.

Product Attributes

  • Brand: Silan Microelectronics
  • Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
  • Hazardous Substance Control: Pb free, Halogen free

Technical Specifications

Part No. Package Marking Packing Type 8A, 500V, RDS(on)(typ.) VDS VGS ID (TC=25C) ID (TC=100C) IDM PD (TC=25C) EAS TJ Range Tstg Range RJC RJA BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD Trr Qrr
SVF840F TO-220F-3L SVF840F Tube 0.68@VGS=10V 500V 30V 8A 5A 32A 49W 511.6mJ -55+150C -55+150C 2.56C/W 62.5C/W 500V 1.0A 100nA 2.0-4.0V 0.68-0.90 904pF 120pF 2.69pF 29.2ns 59.6ns 41.3ns 29.2ns 14.7nC 5.6nC 4.4nC 8.0A 32.0A 1.4V 470.91ns 3.28C
SVF840DTR TO-252-2L SVF840D Tape & Reel 0.68@VGS=10V 500V 30V 8A 5A 32A 130W 511.6mJ -55+150C -55+150C 0.96C/W 62.0C/W 500V 1.0A 100nA 2.0-4.0V 0.68-0.90 904pF 120pF 2.69pF 29.2ns 59.6ns 41.3ns 29.2ns 14.7nC 5.6nC 4.4nC 8.0A 32.0A 1.4V 470.91ns 3.28C
SVF840S TO-263-2L SVF840S Tube 0.68@VGS=10V 500V 30V 8A 5A 32A 131W 511.6mJ -55+150C -55+150C 0.95C/W 110C/W 500V 1.0A 100nA 2.0-4.0V 0.68-0.90 904pF 120pF 2.69pF 29.2ns 59.6ns 41.3ns 29.2ns 14.7nC 5.6nC 4.4nC 8.0A 32.0A 1.4V 470.91ns 3.28C
SVF840STR TO-263-2L SVF840S Tape & Reel 0.68@VGS=10V 500V 30V 8A 5A 32A 131W 511.6mJ -55+150C -55+150C 0.95C/W 110C/W 500V 1.0A 100nA 2.0-4.0V 0.68-0.90 904pF 120pF 2.69pF 29.2ns 59.6ns 41.3ns 29.2ns 14.7nC 5.6nC 4.4nC 8.0A 32.0A 1.4V 470.91ns 3.28C
SVF840MJ TO-251J-3L SVF840MJ Tube 0.68@VGS=10V 500V 30V 8A 5A 32A 120W 511.6mJ -55+150C -55+150C 1.04C/W 62C/W 500V 1.0A 100nA 2.0-4.0V 0.68-0.90 904pF 120pF 2.69pF 29.2ns 59.6ns 41.3ns 29.2ns 14.7nC 5.6nC 4.4nC 8.0A 32.0A 1.4V 470.91ns 3.28C
SVF840FD TO-220FD-3L SVF840FD Tube 0.68@VGS=10V 500V 30V 8A 5A 32A 49W 511.6mJ -55+150C -55+150C 2.56C/W 62.5C/W 500V 1.0A 100nA 2.0-4.0V 0.68-0.90 904pF 120pF 2.69pF 29.2ns 59.6ns 41.3ns 29.2ns 14.7nC 5.6nC 4.4nC 8.0A 32.0A 1.4V 470.91ns 3.28C

2501091111_Hangzhou-Silan-Microelectronics-SVF840F_C601613.pdf

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