SOD123 package High Diode BZT52C12 Zener diode offering voltage stabilization in electronic devices
Key Attributes
Model Number:
BZT52C12
Product Custom Attributes
Impedance(Zzt):
25Ω
Diode Configuration:
Independent
Zener Voltage(Range):
11.4V~12.7V
Pd - Power Dissipation:
500mW
Zener Voltage(Nom):
12V
Impedance(Zzk):
150Ω
Mfr. Part #:
BZT52C12
Package:
SOD-123
Product Description
Product Overview
The SOD123 plastic-encapsulated Zener diodes from High Diode Semiconductor are designed for voltage stabilization applications. These diodes offer a wide range of Zener voltages from 2.4V to 43V, with a maximum power dissipation of 500mW. They are suitable for various electronic circuits requiring precise voltage regulation.
Product Attributes
- Brand: High Diode Semiconductor
- Package Type: SOD123
- Diode Type: Zener Diodes
- Encapsulation: Plastic
Technical Specifications
| Item | Symbol | Unit | Conditions | Max |
|---|---|---|---|---|
| Power dissipation | Pd | mW | TA=25 | 500 |
| Zener current | IZ | mA | ||
| Zener Voltage | Vz | V | 2.4V- 43V | |
| Maximum junction temperature | Tj | -65 to +150 | ||
| Storage temperature range | Tstg | -65 to +150 | ||
| Thermal resistance | RJA | /W | Between junction and ambient | 340 |
| Forward voltage | VF | V | IF =10mA | 0.9 |
Model Specific Electrical Characteristics (TA=25 unless otherwise specified)
| Type Marking Code | Zener Voltage Range (Vznom) | Zener Voltage (VZT) at IZT (V) | IZT (mA) | Dynamic Impedance (ZZT) at IZT () Max. | ZZT at IZT (mA) | Dynamic Impedance (ZZK) at IZK () Max. | IZK (mA) | Reverse Leakage Current (IR) at VR (A) Max. | VR (V) |
|---|---|---|---|---|---|---|---|---|---|
| BZT52C2V4 WX | 2.2...2.6 | 2.4 | 5 | 100 | 5 | 600 | 1 | 50 | 1 |
| BZT52C2V7 W1 | 2.5...2.9 | 2.7 | 5 | 100 | 5 | 600 | 1 | 20 | 1 |
| BZT52C3V0 W2 | 2.8...3.2 | 3.0 | 5 | 95 | 5 | 600 | 1 | 10 | 1 |
| BZT52C3V3 W3 | 3.1...3.5 | 3.3 | 5 | 95 | 5 | 600 | 1 | 5 | 1 |
| BZT52C3V6 W4 | 3.4...3.8 | 3.6 | 5 | 90 | 5 | 600 | 1 | 5 | 1 |
| BZT52C3V9 W5 | 3.7...4.1 | 3.9 | 5 | 90 | 5 | 600 | 1 | 3 | 1 |
| BZT52C4V3 W6 | 4...4.6 | 4.3 | 5 | 90 | 5 | 600 | 1 | 3 | 1 |
| BZT52C4V7 W7 | 4.4...5 | 4.7 | 5 | 80 | 5 | 500 | 1 | 3 | 2 |
| BZT52C5V1 W8 | 4.8...5.4 | 5.1 | 5 | 60 | 5 | 480 | 1 | 2 | 2 |
| BZT52C5V6 W9 | 5.2...6 | 5.6 | 5 | 40 | 5 | 400 | 1 | 1 | 2 |
| BZT52C6V2 WA | 5.8...6.6 | 6.2 | 5 | 10 | 5 | 150 | 1 | 3 | 4 |
| BZT52C6V8 WB | 6.4...7.2 | 6.8 | 5 | 15 | 5 | 80 | 1 | 2 | 4 |
| BZT52C7V5 WC | 7...7.9 | 7.5 | 5 | 15 | 5 | 80 | 1 | 1 | 5 |
| BZT52C8V2 WD | 7.7...8.7 | 8.2 | 5 | 15 | 5 | 80 | 1 | 0.7 | 5 |
| BZT52C9V1 WE | 8.5...9.6 | 9.1 | 5 | 15 | 5 | 100 | 1 | 0.5 | 6 |
| BZT52C10 WF | 9.4...10.6 | 10 | 5 | 20 | 5 | 150 | 1 | 0.2 | 7 |
| BZT52C11 WG | 10.4...11.6 | 11 | 5 | 20 | 5 | 150 | 1 | 0.1 | 8 |
| BZT52C12 WH | 11.4...12.7 | 12 | 5 | 25 | 5 | 150 | 1 | 0.1 | 8 |
| BZT52C13 WI | 12.4...14.1 | 13 | 5 | 30 | 5 | 170 | 1 | 0.1 | 8 |
| BZT52C15 WJ | 13.8...15.6 | 15 | 5 | 30 | 5 | 200 | 1 | 0.1 | 10.5 |
| BZT52C16 WK | 15.3...17.1 | 16 | 5 | 40 | 5 | 200 | 1 | 0.1 | 11.2 |
| BZT52C18 WL | 16.8...19.1 | 18 | 5 | 45 | 5 | 225 | 1 | 0.1 | 12.6 |
| BZT52C20 WM | 18.8...21.2 | 20 | 5 | 55 | 5 | 225 | 1 | 0.1 | 14 |
| BZT52C22 WN | 20.8...23.3 | 22 | 5 | 55 | 5 | 250 | 1 | 0.1 | 15.4 |
| BZT52C24 WO | 22.8...25.6 | 24 | 5 | 70 | 5 | 250 | 1 | 0.1 | 16.8 |
| BZT52C27 WP | 25.1...28.9 | 27 | 2 | 80 | 2 | 300 | 0.5 | 0.1 | 18.9 |
| BZT52C30 WQ | 28...32 | 30 | 2 | 80 | 2 | 300 | 0.5 | 0.1 | 21 |
| BZT52C33 WR | 31...35 | 33 | 2 | 80 | 2 | 325 | 0.5 | 0.1 | 23.1 |
| BZT52C36 WS | 34...38 | 36 | 2 | 90 | 2 | 350 | 0.5 | 0.1 | 25.2 |
| BZT52C39 WT | 37...41 | 39 | 2 | 130 | 2 | 350 | 0.5 | 0.1 | 27.3 |
| BZT52C43 WU | 40...46 | 43 | 2.5 | 130 | 2 | 500 | 1 | 2 | 33 |
Package Information
| Package | Dimensions |
|---|---|
| SOD-123 | (Dimensions not specified in text) |
2410121322_High-Diode-BZT52C12_C571379.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
