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quality Darlington array IC HGSEMI MC1413N with open collector outputs and continuous collector current of 500mA per channel factory
quality Darlington array IC HGSEMI MC1413N with open collector outputs and continuous collector current of 500mA per channel factory

Darlington array IC HGSEMI MC1413N with open collector outputs and continuous collector current of 500mA per channel

Key Attributes
Model Number: MC1413N
Product Custom Attributes
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MC1413N
Package:
DIP-16
Product Description

Product Overview

The MC1413 is a high-voltage, high-current Darlington array integrated circuit, comprising seven silicon NPN Darlington pairs with open-collector outputs and a common emitter. Each unit includes a ballast resistor and a base-emitter resistor for improved efficiency and reduced leakage. With integrated clamp diodes for inductive loads, the MC1413 is designed for direct interface with TTL, CMOS, and PMOS logic levels, eliminating the need for standard logic buffers. It offers a high output voltage capability of up to 50V and a continuous collector output current of 500mA per channel, making it suitable for driving solenoids, relays, DC lighting, small motors, and LEDs.

Product Attributes

  • Brand: HG Semi
  • Product Series: MC1413

Technical Specifications

Product Name Package Print Name Packaging Quantity
MC1413N DIP-16 MC1413 Tube 1000 pcs/box
MC1413M/TR SOP-16 MC1413 Tape & Reel 2500 pcs/reel
MC1413MT/TR TSSOP-16 MC1413 Tape & Reel 2500 pcs/reel
MC1413BN DIP-16 MC1413B Tube 1000 pcs/box
MC1413BM/TR SOP-16 MC1413B Tape & Reel 2500 pcs/reel
MC1413BMT/TR TSSOP-16 MC1413B Tape & Reel 2500 pcs/reel

Key Features

  • Seven high-gain Darlington arrays
  • High output voltage (up to 50V)
  • 500mA collector output current (single channel)
  • Direct interface with TTL, CMOS, and PMOS
  • Continuous diodes for inductive loads
  • Wide operating temperature range

Absolute Maximum Ratings

Parameter Range Unit
Input Voltage -0.3 to 30 V
Output Voltage 55 V
Emitter to Base Breakdown Voltage 6.0 V
Continuous Collector Current 500 mA
Continuous Base Current 25 mA
Storage Temperature -65 to 150 C
Junction Temperature Range -40 to 150 C
Operating Temperature Range (MC1413) -20 to 85 C
Operating Temperature Range (MC1413B) -40 to 85 C
Lead Temperature (Soldering, 10s) 260 C

Electrical Characteristics (Unless otherwise specified: V+ = 5V, Ta = 25C)

Symbol Parameter Test Condition Min Typ Max Unit
ICEX Output Leakage Current TA= 25C, VCE = 50V (Fig. 1) 20 A
TA= 85C, VCE = 50V (Fig. 1) 100 A
VCE(Sat) CE Saturation Voltage IC= 350mA, IB = 500A (Fig. 3) (Note 3) 1.30 1.6 V
IC= 200mA, IB = 350A (Fig. 3) 1.1 1.3 V
IC= 100mA, IB = 250A (Fig. 3) 0.9 1.1 V
II(ON) Turn-On Input Current VI= 3.85V (Fig. 4) 0.93 1.35 mA
II(OFF) Turn-Off Input Current (Note 4) IC= 500A (Fig. 5) 50 100 A
TA= +25C 50 100 A
TA= +85C 25 50 A
VI(ON) Input Voltage (Note 5) VCE =2.0V, IC=200mA (Fig. 6) 2.4 V
VCE =2.0V, IC=250mA (Fig. 6) 2.7 V
VCE =2.0V, IC=300mA (Fig. 6) 3.0 V
CI Input Capacitance 15 30 pF
tPLH Turn-On Delay Time 0.5 VI to 0.5 VO 1.0 s
tPHL Turn-Off Delay Time 0.5 VI to 0.5 VO 1.0 s
IR Clamp Diode Leakage Current VR= 50V (Fig. 7) 5 10 A
TA= 25C 5 10 A
TA= 85C 10 50 A
VF Clamp Diode Forward Voltage IF= 350mA (Fig. 8) 1.7 2.0 V

Package Dimensions

DIP-16

Dimensions In Millimeters

Symbol A B D D1 E L L1 a b c d
Min 6.10 18.94 8.10 7.42 3.10 0.50 3.00 1.50 0.85 0.40 2.54 BSC
Max 6.68 19.56 10.9 7.82 3.55 0.70 3.60 1.55 0.90 0.50

SOP-16

Dimensions In Millimeters

Symbol A A1 B C C1 D Q a b
Min 1.35 0.05 9.80 5.80 3.80 0.40 0 0.35 1.27 BSC
Max 1.55 0.20 10.0 6.20 4.00 0.80 8 0.45

TSSOP-16

Dimensions In Millimeters

Symbol A A1 B C C1 D Q a b
Min 0.85 0.05 4.90 6.20 4.30 0.40 0 0.20 0.65 BSC
Max 0.95 0.20 5.10 6.60 4.50 0.80 8 0.25

2512082058_HGSEMI-MC1413N_C512778.pdf

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