general purpose transistor High Diode BC817 with high collector current and low saturation voltage
Key Attributes
Model Number:
BC817
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
BC817
Package:
SOT-23
Product Description
Product Overview
The BC817 is a general-purpose NPN transistor designed for AF applications. It features high collector current, high current gain, and low collector-emitter saturation voltage. Its complementary type is the BC807 (PNP).
Product Attributes
- Brand: High Diode Semiconductor
- Package: SOT-23
- Material: Plastic-Encapsulate Transistors
- Complementary Type: BC807 (PNP)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | VCBO | IC= 10A, IE=0 | 50 | V | ||
| Collector-emitter breakdown voltage | VCEO | IC= 10mA, IB=0 | 45 | V | ||
| Emitter-base breakdown voltage | VEBO | IE= 1A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB= 45 V , IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=4V, IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=1V, IC= 100mA | 100 | 600 | ||
| DC current gain | hFE(2) | VCE=1V, IC= 500mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC= 500mA, IB= 50mA | 0.7 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC= 500mA, IB= 50mA | 1.2 | V | ||
| Base-emitter voltage | VBE | VCE= 1 V, IC= 500mA | 1.2 | V | ||
| Collector capacitance | Cob | VCB=10V ,f=1MHz | 10 | pF | ||
| Transition frequency | fT | VCE= 5 V, IC= 10mA f=100MHz | 100 | MHz | ||
| Collector Power Dissipation | PC | 300 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 |
1912171428_High-Diode-BC817_C466643.pdf
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