Semiconductor PNP Transistor With High Diode S9012 Offering High Collector Current And SOT23 Package

Key Attributes
Model Number: S9012
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
S9012
Package:
SOT-23
Product Description

Product Overview

The S9012 is a high diode semiconductor transistor in a SOT-23 package. It is a PNP type transistor with high collector current capability and excellent hFE linearity. It is complementary to the S9013 transistor.

Product Attributes

  • Brand: High Diode Semiconductor
  • Package Type: SOT-23
  • Transistor Type: PNP
  • Features: High Collector Current, Complementary to S9013, Excellent hFE Linearity

Technical Specifications

SymbolParameterValueUnitTest ConditionsMinTypMax
VCEOCollector-Emitter Voltage-25V
VEBOEmitter-Base Voltage-5V
ICCollector Current-500mA
PCCollector Power Dissipation300mW
RJAThermal Resistance From Junction To Ambient416/W
TjJunction Temperature150
TstgStorage Temperature-55+150
V(BR)CBOCollector-base breakdown voltage-40VIC=-0.1mA, IE=0-40
V(BR)CEOCollector-emitter breakdown voltage-25VIC=-1mA, IB=0-25
V(BR)EBOEmitter-base breakdown voltage-5VIE=-0.1mA, IC=0-5
ICBOCollector cut-off current-0.1uAVCB=-40V, IE=0-0.1
ICEOCollector cut-off current-0.1uAVCE=-20V, IB=0-0.1
IEBOEmitter cut-off current-0.1uAVEB=-5V, IC=0-0.1
hFEDC current gainVCE=-1V, IC=-50mA120400
RANK L (120-200)
RANK H (200-350)
VCE(sat)Collector-emitter saturation voltageVIC=-500mA, IB=-50mA-0.6
VBE(sat)Base-emitter saturation voltageVIC=-500mA, IB=-50mA-1.2
fTTransition frequency150MHzVCE=-6V,IC=-20mA, f=30MHz150
CobCollector output capacitance5pFVCB=-10V, IE=0, f=1MHz5

2410121341_High-Diode-S9012_C466628.pdf

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