SOD123 Encapsulated High Diode BZT52C20 Zener Diode Designed for Stable Voltage Output in Electronics

Key Attributes
Model Number: BZT52C20
Product Custom Attributes
Operating Junction Temperature Range:
-65℃~+150℃
Impedance(Zzt):
55Ω
Diode Configuration:
Independent
Zener Voltage(Range):
18.8V~21.2V
Pd - Power Dissipation:
500mW
Zener Voltage(Nom):
20V
Impedance(Zzk):
225Ω
Mfr. Part #:
BZT52C20
Package:
SOD-123
Product Description

Product Overview

The SOD123 plastic-encapsulated Zener diodes from High Diode Semiconductor are designed for voltage stabilization applications. These devices offer a wide range of Zener voltages from 2.4V to 43V, with a maximum power dissipation of 500mW. They are suitable for various electronic circuits requiring precise voltage regulation.

Product Attributes

  • Brand: High Diode Semiconductor
  • Package: SOD-123

Technical Specifications

Model Marking Code Zener Voltage Range (Vznom) Zener Voltage (VZT) at IZT (V) Zener Current (IZT) (mA) Dynamic Impedance (ZZT) at IZT () Dynamic Impedance (ZZK) at IZK () Reverse Leakage Current (IR) at VR (A) Max. Power Dissipation (Pd) (mW) Thermal Resistance (RJA) (/W) Forward Voltage (VF) at IF=10mA (V) Max. Junction Temperature (Tj) () Storage Temperature Range (Tstg) ()
BZT52C2V4 WX 2.2...2.6 2.4 5 100 600 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C2V7 W1 2.5...2.9 2.7 5 100 600 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C3V0 W2 2.8...3.2 3.0 5 95 600 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C3V3 W3 3.1...3.5 3.3 5 95 600 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C3V6 W4 3.4...3.8 3.6 5 90 600 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C3V9 W5 3.7...4.1 3.9 5 90 600 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C4V3 W6 4...4.6 4.3 5 90 600 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C4V7 W7 4.4...5 4.7 5 80 500 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C5V1 W8 4.8...5.4 5.1 5 60 480 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C5V6 W9 5.2...6 5.6 5 40 400 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C6V2 WA 5.8...6.6 6.2 5 10 150 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C6V8 WB 6.4...7.2 6.8 5 15 80 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C7V5 WC 7...7.9 7.5 5 15 80 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C8V2 WD 7.7...8.7 8.2 5 15 80 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C9V1 WE 8.5...9.6 9.1 5 15 100 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C10 WF 9.4...10.6 10 5 20 150 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C11 WG 10.4...11.6 11 5 20 150 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C12 WH 11.4...12.7 12 5 25 150 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C13 WI 12.4...14.1 13 5 30 170 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C15 WJ 13.8...15.6 15 5 30 200 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C16 WK 15.3...17.1 16 5 40 200 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C18 WL 16.8...19.1 18 5 45 225 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C20 WM 18.8...21.2 20 5 55 225 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C22 WN 20.8...23.3 22 5 55 250 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C24 WO 22.8...25.6 24 5 70 250 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C27 WP 25.1...28.9 27 2 80 300 0.5 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C30 WQ 28...32 30 2 80 300 0.5 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C33 WR 31...35 33 2 80 325 0.5 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C36 WS 34...38 36 2 90 350 0.5 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C39 WT 37...41 39 2 130 350 0.5 500 (TA=25) 340 0.9 -65 to +150 -65 to +150
BZT52C43 WU 40...46 43 2.5 130 500 1 500 (TA=25) 340 0.9 -65 to +150 -65 to +150

Note: VZT is tested with pulses (20 ms).


2410121322_High-Diode-BZT52C20_C571377.pdf

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