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quality HL Haolin Elec C945 GR T 2040 Plastic Encapsulated Transistor Designed for Electronic Amplification factory
quality HL Haolin Elec C945 GR T 2040 Plastic Encapsulated Transistor Designed for Electronic Amplification factory

HL Haolin Elec C945 GR T 2040 Plastic Encapsulated Transistor Designed for Electronic Amplification

Key Attributes
Model Number: C945 GR T 2040
Product Custom Attributes
Mfr. Part #:
C945 GR T 2040
Package:
TO-92
Product Description

Product Overview

This document describes the TO-92 Plastic-Encapsulated Transistor (NPN) from SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD. It features excellent hFE linearity and low noise, making it a complementary part to the A733. This transistor is suitable for various electronic applications requiring reliable amplification and switching.

Product Attributes

  • Brand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: Not specified
  • Material: Plastic-Encapsulated
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Units
MAXIMUM RATINGS
Collector-Base Voltage VCBO (TA=25 unless otherwise noted) 60 V
Collector-Emitter Voltage VCEO (TA=25 unless otherwise noted) 50 V
Emitter-Base Voltage VEBO (TA=25 unless otherwise noted) 5 V
Collector Current -Continuous IC (TA=25 unless otherwise noted) 150 mA
Collector Power Dissipation PC (TA=25 unless otherwise noted) 400 mW
Junction Temperature TJ (TA=25 unless otherwise noted) 125
Storage Temperature Tstg (TA=25 unless otherwise noted) -55 125
ELECTRICAL CHARACTERISTICS
Collector-base breakdown voltage V(BR)CBO IC=1mA , IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=100uA , IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=100mA, IC=0 5 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 uA
Collector cut-off current ICEO VCE=45V 0.1 uA
Emitter cut-off current IEBO VEB=5V , IC=0 0.1 uA
DC current gain hFE(1) VCE=6 V , IC=1mA 70 700
DC current gain hFE(2) VCE=6 V , IC=0.1mA 40
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V
Transition frequency fT VCE=6V,IC=10mA,f =30 MHz 200 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHZ 3.0 pF
Noise figure NF VCE=6V,IC=0.1mA RG=10k,f=1kMHZ 10 dB

hFE Classification

Rank O Y GR BL
Range 70-140 120-240 200-400 350-700
Index 1 2 3

2409272232_HL-Haolin-Elec-C945-GR-T-2040_C5187724.pdf

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