Trench technology based HUASHUO HSM4006 N channel MOSFET for synchronous buck converter applications
Key Attributes
Model Number:
HSM4006
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
138pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.332nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
18.8nC@4.5V
Mfr. Part #:
HSM4006
Package:
SOP-8
Product Description
Product Overview
The HSM4006 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and low gate charge, contributing to efficient power conversion. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel Fast Switching MOSFET
- RoHS Compliant: Yes
- Green Product: Yes
- EAS Guaranteed: 100%
- Packaging: Tape&Reel (2500 units/reel)
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSM4006 | Drain-Source Voltage (VDS) | 40 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Continuous Drain Current (ID@TC=25) | VGS @ 10V | 12 | A | |||
| Continuous Drain Current (ID@TC=100) | VGS @ 10V | 8.3 | A | |||
| Pulsed Drain Current (IDM) | 42 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 76 | mJ | ||||
| Avalanche Current (IAS) | 39 | A | ||||
| Total Power Dissipation (PD@TC=25) | 1.5 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) | Steady State | --- | 85 | /W | ||
| Thermal Resistance Junction-Case (RJC) | Steady State | --- | 28 | /W | ||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 40 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=10V , ID=12A | --- | --- | 7.5 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V | |
| Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | --- | 10.5 | A | |
| Package | SOP-8 | |||||
| Packaging | 2500/Tape&Reel |
2410121517_HUASHUO-HSM4006_C700991.pdf
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