power management component Huixin BC2302 N Channel Enhancement Mode Power MOSFET with switching and low resistance
Key Attributes
Model Number:
BC2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.3A
RDS(on):
29mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
750mV
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Pd - Power Dissipation:
900mW
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
300pF
Gate Charge(Qg):
4nC@4.5V
Mfr. Part #:
BC2302
Package:
SOT-23
Product Description
BC2302 N-Channel Enhancement Mode Power MOSFET
The BC2302 is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features fast switching, low gate charge, and low RDS(on), offering high power and current handling capabilities. Ideal for battery protection, load switching, and power management applications.
Product Attributes
- Brand: Not Specified
- Origin: Not Specified
- Material: Not Specified
- Color: Not Specified
- Certifications: UL 5
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.5 | 0.75 | 1.2 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=3A | -- | 29 | 45 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=2.5V,ID=2.8A | -- | 35 | 60 | m |
| Forward Transconductance | gFS | VDS=5V,ID=3A | -- | 8 | -- | S |
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHz | -- | 300 | -- | pF |
| Output Capacitance | Coss | -- | 120 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 80 | -- | pF | |
| Turn-on Delay Time | td(on) | VDD=10V, ID=3A VGS=4.5V,RGEN=6 | -- | 10 | -- | nS |
| Turn-on Rise Time | tr | -- | 50 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 17 | -- | nS | |
| Turn-off Fall Time | tf | -- | 10 | -- | nS | |
| Total Gate Charge | Qg | VDS=10V,ID=3A, VGS=4.5V | -- | 4 | -- | nC |
| Gate-Source Charge | Qgs | -- | 0.7 | -- | nC | |
| Gate-Drain Charge | Qg | -- | 1.5 | -- | nC | |
| Diode Forward Voltage | VSD | VGS=0V,IS=3.3A | -- | 0.75 | 1.2 | V |
| Diode Forward Current | IS | -- | -- | 3.3 | A | |
| Drain-Source Voltage | VDS | -- | -- | 20 | V | |
| Gate-Source Voltage | VGS | 12 | -- | -- | V | |
| Drain Current-Continuous | ID | -- | -- | 3.3 | A | |
| Drain Current-Pulsed | IDM | Note1 | -- | -- | 16 | A |
| Maximum Power Dissipation | PD | -- | -- | 0.9 | W | |
| Junction Temperature | TJ | -- | -- | 150 | ||
| Storage Temperature Range | TSTG | -55 | -- | +150 | ||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | -- | 139 | -- | /W |
2507301400_Huixin-BC2302_C49435664.pdf
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