Low Gate Charge Dual N P Channel MOSFET Device HXY MOSFET HXY4612S for Switching and Battery Protection
Key Attributes
Model Number:
HXY4612S
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
140mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
76pF
Pd - Power Dissipation:
2W
Input Capacitance(Ciss):
1.137nF
Gate Charge(Qg):
19nC@4.5V
Mfr. Part #:
HXY4612S
Package:
SOP-8
Product Description
Product Overview
The HXY4612S is a Dual N+P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications, including wireless charging, boost drivers, and brushless motors.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen, China
- Package: SOP-8
Technical Specifications
| Model | Channel Type | VDS (V) | ID (A) | RDS(ON) (m) @ VGS | Package | Marking | Quantity (PCS) |
| HXY4612S | N-Channel | 60 | 5 | < 70 @ 10V | SOP-8 | 4612XXX | 3000 |
| HXY4612S | P-Channel | -60 | -4 | < 140 @ -10V | SOP-8 | 4612XXX | 3000 |
2509181543_HXY-MOSFET-HXY4612S_C3033414.pdf
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