Power Switching N Channel Enhancement Mode MOSFET HUAYI HY1515P with 150V 50A Rating and Low On Resistance
Key Attributes
Model Number:
HY1515P
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
50A
RDS(on):
28mΩ@10V,30A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3.8V
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.447nF
Pd - Power Dissipation:
180W
Mfr. Part #:
HY1515P
Package:
TO-220FB-3L
Product Description
Product Overview
The HY1515P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a 150V/50A rating and a low on-resistance of 28m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green options available. It is suitable for use in Uninterruptible Power Supplies and other power switching circuits.
Product Attributes
- Brand: HY (Huayi)
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Model | Package | VDSS (V) | VGSS (V) | ID (A) @ Tc=25C | RDS(ON) (m) @ VGS=10V | PD (W) @ Tc=25C | Application |
| HY1515P | TO-220FB-3L | 150 | 20 | 50 | 28 (typ.) | 180 | Power Switching, Uninterruptible Power Supply |
| HY1515B | TO-263-2L | 150 | 20 | 50 | 28 (typ.) | 180 | Power Switching, Uninterruptible Power Supply |
2409302231_HUAYI-HY1515P_C5121336.pdf
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