Power Management MOSFET HUAYI HY3215B N Channel Enhancement Mode for Switching and Inverter Systems
Key Attributes
Model Number:
HY3215B
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
120A
RDS(on):
15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
321pF
Number:
1 N-channel
Output Capacitance(Coss):
548pF
Input Capacitance(Ciss):
5.785nF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
137nC@10V
Mfr. Part #:
HY3215B
Package:
TO-263-2L
Product Description
Product Overview
The HY3215 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with low on-state resistance and is available in lead-free and green (RoHS compliant) options. The device is reliable, rugged, and 100% avalanche tested.
Product Attributes
- Brand: HUAYI
- Material: Lead Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Model | Package | VDSS (V) | ID (A) | RDS(ON) (m) | VGS(th) (V) | EAS (mJ) | Application |
| HY3215P/M/B/PS/PM | TO-220FB-3L | 150 | 120 (TC=25C) / 84 (TC=100C) | 12 (typ. @ VGS=10V) | 3.0-5.0 | 5785 | Power Management for Inverter Systems, Switching application |
| HY3215P/M/B/PS/PM | TO-220FB-3S | 150 | 120 (TC=25C) / 84 (TC=100C) | 12 (typ. @ VGS=10V) | 3.0-5.0 | 5785 | Power Management for Inverter Systems, Switching application |
| HY3215P/M/B/PS/PM | TO-263-2L | 150 | 120 (TC=25C) / 84 (TC=100C) | 12 (typ. @ VGS=10V) | 3.0-5.0 | 5785 | Power Management for Inverter Systems, Switching application |
| HY3215P/M/B/PS/PM | TO-3PS-3L | 150 | 120 (TC=25C) / 84 (TC=100C) | 12 (typ. @ VGS=10V) | 3.0-5.0 | 5785 | Power Management for Inverter Systems, Switching application |
| HY3215P/M/B/PS/PM | TO-3PM-3S | 150 | 120 (TC=25C) / 84 (TC=100C) | 12 (typ. @ VGS=10V) | 3.0-5.0 | 5785 | Power Management for Inverter Systems, Switching application |
2410121910_HUAYI-HY3215B_C330381.pdf
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