Bidirectional Thyristor HXY MOSFET BT131-800D with Plastic Encapsulation and 10A Surge Current
Key Attributes
Model Number:
BT131-800D
Product Custom Attributes
Holding Current (Ih):
30mA
Average Gate Power Dissipation (PG(AV)):
400mW
Current - On State(It(RMS)):
1A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
10A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
BT131-800D
Package:
SOT-89
Product Description
Product Overview
The BT131-800D is a general-purpose bidirectional switching thyristor from HUAXUANYANG ELECTRONICS. It features a blocking voltage up to 800V and an RMS on-state current of 1A. This plastic-encapsulated thyristor is suitable for a wide range of general-purpose switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Product ID: BT131-800D
- Origin: Shenzhen, China
- Package: SOT-89
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Conditions |
| VDRM / VRRM | Repetitive peak off-state voltage | 800 | V | |
| IGM | Peak Gate Current | - | A | |
| VGM | Peak gate voltage | - | V | |
| PGM | Peak gate power | - | W | |
| Tj | Junction Temperature | -40 ~ 125 | C | |
| G(AV) | Average Gate Power Dissipation | 0.4 | W | |
| IT(RMS) | RMS on-state current | 1 | A | |
| ITSM | Non repetitive surge peak on-state current | 10 | A | t =20ms, Tj =25C |
| It | It for fusing | 0.8 | As | t =16.7ms, Tj =25C |
| dl/dt | Critical-rate of rise of commutation current | 10 | A/us | IG=2IGT, tr100ns, F=120Hz |
| dV/dt | Critical-rate of rise of commutating voltage | 50 | V/us | VD=12V, RL=100, Tj =125C |
| tgt | Turn-on time | 0.3 | us | ITM =16A, VDM=VDRM, Tj =125C |
| Tstg | Storage Temperature | -40 ~ 150 | C | |
| IDRM, IRRM | Repetitive Peak Off-State Current / Repetitive Peak Reverse Current | 0.8 | mA | VDRM=VRRM, Tj =25C |
| IDRM, IRRM | Repetitive Peak Off-State Current / Repetitive Peak Reverse Current | 5 | mA | VDRM=VRRM, Tj =125C |
| VGD | Gate non-trigger voltage | 0.2 | V | VD= 1/2VDRM |
| VTM | On-state voltage | 1.65 | V | IT=0.8A,tp=380us |
| IGT | Gate trigger current | 0.8 | mA | VD=12V, RL=100 |
| VGT | Gate trigger voltage | 2.5 | V | VD=12V, RL=100 |
| IH | Holding current | 30 | mA |
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
| b | 1.400 - 1.600 | 0.055 - 0.063 |
| b1 | 0.320 - 0.520 | 0.013 - 0.020 |
| c | 0.400 - 0.580 | 0.016 - 0.023 |
| D | 0.350 - 0.440 | 0.014 - 0.017 |
| D1 | 4.400 - 4.600 | 0.173 - 0.181 |
| E | 2.300 - 2.600 | 0.091 - 0.102 |
| E1 | 3.940 - 4.250 | 0.155 - 0.167 |
| e | ||
| e1 | ||
| L | 0.900 - 1.200 | 0.035 - 0.047 |
| 1.550 REF. | 0.061 REF. | |
| 1.500 TYP. | 0.060 TYP. | |
| 3.000 TYP. | 0.118 TYP. |
2508121550_HXY-MOSFET-BT131-800D_C50275351.pdf
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