Planar Die Zener Diode Huixin BZT52C3V6S Medium Current 200mW Power Dissipation Plastic Encapsulated
Key Attributes
Model Number:
BZT52C3V6S
Product Custom Attributes
Impedance(Zzt):
90Ω
Pd - Power Dissipation:
200mW
Zener Voltage(Range):
3.4V~3.8V
Zener Voltage(Nom):
3.6V
Impedance(Zzk):
600Ω
Mfr. Part #:
BZT52C3V6S
Package:
SOD-323
Product Description
Product Overview
The BZT52C2V4S-BZT52C39S series are planar die construction Zener diodes designed for general purpose, medium current applications. They offer 200mW power dissipation on ceramic PBC and are ideally suited for automated assembly processes. Available in a lead-free version.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Plastic-encapsulated
- Color: Not specified
- Certifications: Lead-free version available
Technical Specifications
| Type | Marking | Nominal Zener Voltage (V) | Min Zener Voltage (V) | Max Zener Voltage (V) | Test Current (mA) | Max Zener Impedance () | Max Reverse Current (A) | Power Dissipation (mW) | Junction to Ambient Thermal Resistance (/W) | Operating Junction Temperature (C) | Storage Temperature Range (C) |
| BZT52C2V4S | WX | 2.4 | 2.20 | 2.60 | 5 | 100 | 50 | 200 | 625 | 150 | -55 to +150 |
| BZT52C2V7S | W1 | 2.7 | 2.5 | 2.9 | 5 | 100 | 20 | 200 | 625 | 150 | -55 to +150 |
| BZT52C3V0S | W2 | 3.0 | 2.8 | 3.2 | 5 | 95 | 10 | 200 | 625 | 150 | -55 to +150 |
| BZT52C3V3S | W3 | 3.3 | 3.1 | 3.5 | 5 | 95 | 5 | 200 | 625 | 150 | -55 to +150 |
| BZT52C3V6S | W4 | 3.6 | 3.4 | 3.8 | 5 | 90 | 5 | 200 | 625 | 150 | -55 to +150 |
| BZT52C3V9S | W5 | 3.9 | 3.7 | 4.1 | 5 | 90 | 3 | 200 | 625 | 150 | -55 to +150 |
| BZT52C4V3S | W6 | 4.3 | 4.0 | 4.6 | 5 | 90 | 3 | 200 | 625 | 150 | -55 to +150 |
| BZT52C4V7S | W7 | 4.7 | 4.4 | 5.0 | 5 | 80 | 3 | 200 | 625 | 150 | -55 to +150 |
| BZT52C5V1S | W8 | 5.1 | 4.8 | 5.4 | 5 | 60 | 2 | 200 | 625 | 150 | -55 to +150 |
| BZT52C5V6S | W9 | 5.6 | 5.2 | 6.0 | 5 | 40 | 1 | 200 | 625 | 150 | -55 to +150 |
| BZT52C6V2S | WA | 6.2 | 5.8 | 6.6 | 5 | 10 | 3 | 200 | 625 | 150 | -55 to +150 |
| BZT52C6V8S | WB | 6.8 | 6.4 | 7.2 | 5 | 15 | 2 | 200 | 625 | 150 | -55 to +150 |
| BZT52C7V5S | WC | 7.5 | 7.0 | 7.9 | 5 | 15 | 1 | 200 | 625 | 150 | -55 to +150 |
| BZT52C8V2S | WD | 8.2 | 7.7 | 8.7 | 5 | 15 | 0.7 | 200 | 625 | 150 | -55 to +150 |
| BZT52C9V1S | WE | 9.1 | 8.5 | 9.6 | 5 | 15 | 0.5 | 200 | 625 | 150 | -55 to +150 |
| BZT52C10S | WF | 10 | 9.4 | 10.6 | 5 | 20 | 0.2 | 200 | 625 | 150 | -55 to +150 |
| BZT52C11S | WG | 11 | 10.4 | 11.6 | 5 | 20 | 0.1 | 200 | 625 | 150 | -55 to +150 |
| BZT52C12S | WH | 12 | 11.4 | 12.7 | 5 | 25 | 0.1 | 200 | 625 | 150 | -55 to +150 |
| BZT52C13S | WI | 13 | 12.4 | 14.1 | 5 | 30 | 0.1 | 200 | 625 | 150 | -55 to +150 |
| BZT52C15S | WJ | 15 | 13.8 | 15.6 | 5 | 30 | 0.1 | 200 | 625 | 150 | -55 to +150 |
| BZT52C16S | WK | 16 | 15.3 | 17.1 | 5 | 40 | 0.1 | 200 | 625 | 150 | -55 to +150 |
| BZT52C18S | WL | 18 | 16.8 | 19.1 | 5 | 45 | 0.1 | 200 | 625 | 150 | -55 to +150 |
| BZT52C20S | WM | 20 | 18.8 | 21.2 | 5 | 55 | 0.1 | 200 | 625 | 150 | -55 to +150 |
| BZT52C22S | WN | 22 | 20.8 | 23.3 | 5 | 55 | 0.1 | 200 | 625 | 150 | -55 to +150 |
| BZT52C24S | WO | 24 | 22.8 | 25.6 | 5 | 70 | 0.1 | 200 | 625 | 150 | -55 to +150 |
| BZT52C27S | WP | 27 | 25.1 | 28.9 | 2 | 80 | 0.1 | 200 | 625 | 150 | -55 to +150 |
| BZT52C30S | WQ | 30 | 28.0 | 32.0 | 2 | 80 | 0.1 | 200 | 625 | 150 | -55 to +150 |
| BZT52C33S | WR | 33 | 31.0 | 35.0 | 2 | 80 | 0.1 | 200 | 625 | 150 | -55 to +150 |
| BZT52C36S | WS | 36 | 34.0 | 38.0 | 2 | 90 | 0.1 | 200 | 625 | 150 | -55 to +150 |
| BZT52C39S | WT | 39 | 37.0 | 41.0 | 2 | 130 | 0.1 | 200 | 625 | 150 | -55 to +150 |
Notes:
1. Device mounted on ceramic PCB 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
2509051530_Huixin-BZT52C3V6S_C51883329.pdf
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