Surface Mount Huixin MM3Z13 Silicon Planar Zener Diode with 300 Milliwatt Power and Tight Tolerance
Key Attributes
Model Number:
MM3Z13
Product Custom Attributes
Impedance(Zzt):
35Ω
Pd - Power Dissipation:
300mW
Zener Voltage(Range):
12.4V~14.1V
Zener Voltage(Nom):
13V
Mfr. Part #:
MM3Z13
Package:
SOD-323
Product Description
MM3Z2V0~MM3Z75 Silicon Planar Zener Diodes
The MM3Z2V0~MM3Z75 series are Silicon Planar Zener Diodes designed for surface-mounted applications. These diodes offer a total power dissipation of up to 300 mW and are available with a tolerance of approximately 5%. Their small plastic package (SOD-323) makes them suitable for compact electronic designs.
Product Attributes
- Brand: Not Specified
- Origin: Not Specified
- Material: Silicon Planar
- Color: Not Specified
- Certifications: Not Specified
Technical Specifications
| Type | Marking Code | Nominal Zener Voltage (Vznom) [V] | Test Current (IzT) [mA] | Zener Voltage Range (Vz) [V] | Dynamic Impedance (ZZT) [] | Reverse Leakage Current (IR) [A] | Forward Voltage (VF) [V] |
| MM3Z2V0 | B0 | 2.0 | 5 | 1.8...2.15 | 100 | 120 | 0.5 |
| MM3Z2V2 | C0 | 2.2 | 5 | 2.08...2.33 | 100 | 120 | 0.7 |
| MM3Z2V4 | 1C | 2.4 | 5 | 2.28...2.56 | 100 | 120 | 1 |
| MM3Z2V7 | 1D | 2.7 | 5 | 2.5...2.9 | 110 | 120 | 1 |
| MM3Z3V0 | 1E | 3.0 | 5 | 2.8...3.2 | 120 | 50 | 1 |
| MM3Z3V3 | 1F | 3.3 | 5 | 3.1...3.5 | 130 | 20 | 1 |
| MM3Z3V6 | 1H | 3.6 | 5 | 3.4...3.8 | 130 | 10 | 1 |
| MM3Z3V9 | 1J | 3.9 | 5 | 3.7...4.1 | 130 | 5 | 1 |
| MM3Z4V3 | 1K | 4.3 | 5 | 4...4.6 | 130 | 5 | 1 |
| MM3Z4V7 | 1M | 4.7 | 5 | 4.4...5 | 130 | 5 | 1 |
| MM3Z5V1 | 1N | 5.1 | 5 | 4.8...5.4 | 130 | 5 | 1.5 |
| MM3Z5V6 | 1P | 5.6 | 5 | 5.2...6 | 80 | 5 | 2.5 |
| MM3Z6V2 | 1R | 6.2 | 5 | 5.8...6.6 | 50 | 5 | 3 |
| MM3Z6V8 | 1X | 6.8 | 5 | 6.4...7.2 | 30 | 5 | 3.5 |
| MM3Z7V5 | 1Y | 7.5 | 5 | 7...7.9 | 30 | 5 | 4 |
| MM3Z8V2 | 1Z | 8.2 | 5 | 7.7...8.7 | 30 | 5 | 5 |
| MM3Z9V1 | 2A | 9.1 | 5 | 8.5...9.6 | 30 | 5 | 6 |
| MM3Z10 | 2B | 10 | 5 | 9.4...10.6 | 30 | 5 | 7 |
| MM3Z11 | 2C | 11 | 5 | 10.4...11.6 | 30 | 5 | 8 |
| MM3Z12 | 2D | 12 | 5 | 11.4...12.7 | 35 | 5 | 9 |
| MM3Z13 | 2E | 13 | 5 | 12.4...14.1 | 35 | 5 | 10 |
| MM3Z15 | 2F | 15 | 5 | 13.8...15.6 | 40 | 5 | 11 |
| MM3Z16 | 2H | 16 | 5 | 15.3...17.1 | 40 | 5 | 12 |
| MM3Z18 | 2J | 18 | 5 | 16.8...19.1 | 45 | 5 | 13 |
| MM3Z20 | 2K | 20 | 5 | 18.8...21.2 | 50 | 5 | 15 |
| MM3Z22 | 2M | 22 | 5 | 20.8...23.3 | 55 | 5 | 17 |
| MM3Z24 | 2N | 24 | 5 | 22.8...25.6 | 60 | 5 | 19 |
| MM3Z27 | 2P | 27 | 2 | 25.1...28.9 | 70 | 2 | 21 |
| MM3Z30 | 2R | 30 | 2 | 28...32 | 80 | 2 | 23 |
| MM3Z33 | 2X | 33 | 2 | 31...35 | 80 | 2 | 25 |
| MM3Z36 | 2Y | 36 | 2 | 34...38 | 90 | 2 | 27 |
| MM3Z39 | 2Z | 39 | 2.5 | 37...41 | 100 | 2 | 30 |
| MM3Z43 | 3A | 43 | 2.5 | 40...46 | 130 | 2 | 33 |
| MM3Z47 | 3B | 47 | 2.5 | 44...50 | 150 | 2 | 36 |
| MM3Z51 | 3C | 51 | 2.5 | 48...54 | 180 | 2 | 39 |
| MM3Z56 | 3D | 56 | 2.5 | 52...60 | 180 | 2 | 43 |
| MM3Z62 | 3E | 62 | 2.5 | 58...66 | 200 | 2 | 47 |
| MM3Z68 | 3F | 68 | 2.5 | 64...72 | 250 | 2 | 52 |
| MM3Z75 | 3H | 75 | 2.5 | 70...79 | 300 | 2 | 57 |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Power Dissipation | Ptot | 300 | mW |
| Junction Temperature | Tj | 150 | C |
| Storage Temperature Range | Tstg | -65 to +150 | C |
Electrical Characteristics at Ta = 25 C
| Parameter | Symbol | Max. Unit |
| Thermal Resistance Junction to Ambient Air | RJA | 417 C/W |
| Forward Voltage at IF = 10 mA | VF | 0.9 V |
2507301400_Huixin-MM3Z13_C49435618.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
