86--136 6733 2386
quality 500V N Channel MOSFET Huixin H5N50G with total gate charge of 16 nC and 5A continuous drain current rating factory
quality 500V N Channel MOSFET Huixin H5N50G with total gate charge of 16 nC and 5A continuous drain current rating factory
quality 500V N Channel MOSFET Huixin H5N50G with total gate charge of 16 nC and 5A continuous drain current rating factory
quality 500V N Channel MOSFET Huixin H5N50G with total gate charge of 16 nC and 5A continuous drain current rating factory

500V N Channel MOSFET Huixin H5N50G with total gate charge of 16 nC and 5A continuous drain current rating

Key Attributes
Model Number: H5N50G
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
RDS(on):
1.2Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6.7pF
Number:
1 N-channel
Input Capacitance(Ciss):
478pF
Output Capacitance(Coss):
55pF
Pd - Power Dissipation:
52W
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
H5N50G
Package:
TO-252
Product Description

Product Overview

The H5N50G is a 500V N-Channel MOSFET designed for high-performance applications. It features fast switching speeds, 100% avalanche testing, improved dv/dt capability, and enhanced avalanche ruggedness. This lead-free component is ideal for Switch Mode Power Supplies (SMPS), adapters, chargers, and AC-DC switching power supplies.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Lead Free

Technical Specifications

Part NumberPackageContinuous Drain Current (TC=25)Drain-to-Source VoltageStatic Drain-to-Source On-Resistance (Typ)Total Gate Charge (Typ)
H5N50GTO-2525 A500 V1.2 16 nC

2508041620_Huixin-H5N50G_C49823475.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance factory
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
quality IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems factory
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
quality Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor factory
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
quality Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design factory
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.