Power Management N Channel Enhancement Mode MOSFET HUAYI HY3410P with 100A Continuous Drain Current
Key Attributes
Model Number:
HY3410P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
140A
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
490pF
Number:
1 N-channel
Output Capacitance(Coss):
943pF
Input Capacitance(Ciss):
6.14nF
Pd - Power Dissipation:
285W
Gate Charge(Qg):
130nC@10V
Mfr. Part #:
HY3410P
Package:
TO-220FB
Product Description
HY3410 N-Channel Enhancement Mode MOSFET
The HY3410 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a low on-state resistance (RDS(ON) = 6.2 m typ. @ VGS=10V) and a continuous drain current of 100A. This series is reliable, rugged, 100% avalanche tested, and available in Lead Free and Green devices (RoHS Compliant).
Product Attributes
- Brand: HYMEXA
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
Technical Specifications
| Model | VDSS (V) | ID (A) | RDS(ON) (m) | Package Type | VGS(th) (V) | TJ (C) |
| HY3410P/M/B/PS/PM/MF | 100 | 100 (TC=100C) | 6.2 (typ. @ VGS=10V) | TO-220FB-3L, TO-220FB-3S, TO-263-2L, TO-3PM-3S, TO-3PS-3L, TO-220MF-3L | 2.0 - 4.0 | 175 |
2409302330_HUAYI-HY3410P_C357982.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
