N Channel HXY MOSFET DMN26D0UFB4 7 HXY Featuring Trench Technology for Low Gate Charge and Switching
Key Attributes
Model Number:
DMN26D0UFB4-7-HXY
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
700mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
350mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
450mV
Reverse Transfer Capacitance (Crss@Vds):
4.6pF
Number:
1 N-channel
Input Capacitance(Ciss):
43.6pF@10V
Pd - Power Dissipation:
150mW
Mfr. Part #:
DMN26D0UFB4-7-HXY
Package:
DFN1006-3L
Product Description
Product Overview
The DMN26D0UFB4-7 is an N-Channel Enhancement Mode MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. It utilizes advanced trench technology to offer excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications, featuring high performance with VDS = 20V, ID = 0.7A, and low RDS(ON) values.
Product Attributes
- Brand: HUA XUAN YANG ELECTRONICS
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Product ID: DMN26D0UFB4-7
- Pack Marking: DMN26D0UFB4-7
- Qty(PCS): 10000
- Package Type: DFN1006-3L (X2-DFN100-3)
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | VDS | 20 | V | |||
| VGS | ±10 | V | ||||
| ID | 0.7 | A | ||||
| PD | 0.15 | W | ||||
| TJ,TSTG | -55 | To | 150 | |||
| RJA | (Note 2) | 1250 | /W | |||
| ESD (HBM) | 2500 | V | ||||
| Electrical Characteristics | V(BR)DSS | VGS = 0V, ID =250A | 20 | -- | -- | V |
| IDSS | VDS =20V,VGS = 0V | -- | -- | 1 | A | |
| IGSS | VGS =±10V, VDS = 0V | -- | -- | ±10 | A | |
| VGS(th) | VDS =VGS, ID =250A (note2) | 0.45 | 0.7 | 1.1 | V | |
| RDS(on) | VGS =4.5V, ID =0.5A (note2) | -- | 0.22 | 0.35 | ||
| VGS =2.5V, ID =0.5A (note2) | -- | 0.28 | 0.42 | |||
| gfs | VDS =5.0V, ID =0.5A (note2) | -- | 1.6 | -- | S | |
| Diode forward voltage | VSD | IS=0.8A, VGS =0V | -- | -- | 1.2 | V |
| Dynamic Characteristics | Ciss | VDS =10V,VGS =0V, f =1MHz (note4) | -- | 43.6 | -- | pF |
| Coss | (note4) | -- | 6.8 | -- | pF | |
| Crss | (note4) | -- | 4.6 | -- | pF | |
| Switching Characteristics | td(on) | VGS=4.5V,VDS=10V, RL=20 (note3) | -- | 1.4 | -- | nS |
| tr | (note3) | -- | 27.8 | -- | nS | |
| td(off) | (note3) | -- | 54.6 | -- | nS | |
| tf | (note3) | -- | 25.6 | -- | nS |
2512041354_HXY-MOSFET-DMN26D0UFB4-7-HXY_C6285768.pdf
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