High Voltage Silicon NPN Power Transistor ISC 2SC5027 with 800V Collector Emitter Breakdown Voltage

Key Attributes
Model Number: 2SC5027
Product Custom Attributes
Mfr. Part #:
2SC5027
Package:
TO-220C
Product Description

Product Overview

The ISC 2SC5027 is a Silicon NPN Power Transistor designed for high-speed switching applications. It features a high Collector-Emitter Breakdown Voltage of 800V (Min) and offers minimum lot-to-lot variations for robust device performance and reliable operation.

Product Attributes

  • Brand: ISC
  • Trademark: ISC & ISCsemi
  • Material: Silicon
  • Origin: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

SymbolParameterConditionsMinTyp.MaxUnit
V(BR)CEOCollector-Emitter Breakdown Voltage800V(Min)V
High Switching Speed
VCBOCollector-Base Voltage1100V
VCEOCollector-Emitter Voltage800V
VEBOEmitter-Base Voltage7V
ICCollector Current-Continuous3A
ICMCollector Current-Peak10A
IBBase Current-Continuous1.5A
PCCollector Power Dissipation @TC=2550W
TJJunction Temperature150
TstgStorage Temperature-55150
BVEBOEmitter -Base Breakdown VoltageIE= 1mA; IC= 07V
BVCEOCollector- Emitter Breakdown VoltageIC= 5mA; IB= 0800V
BVCBOCollector- Base Breakdown VoltageIC= 1mA; IE= 01100V
VCE(sat)Collector-Emitter Saturation VoltageIC= 1.5A; IB= 0.3A2.0V
VBE(sat)Base-Emitter Saturation VoltageIC= 1.5A; IB= 0.3A1.5V
ICBOCollector Cutoff CurrentVCB= 800V; IE= 010A
IEBOEmitter Cutoff CurrentVEB= 5V; IC= 010A
hFE1DC Current GainIC= 0.2A; VCE= 5V1040
hFE2DC Current GainIC= 1A; VCE= 5V8
COBOutput CapacitanceIE= 0; VCB= 10V; f= 1MHz60pF
fTCurrent-GainBandwidth ProductIE= 0.2A; VCE= 10V12MHz

2411200110_ISC-2SC5027_C5128641.pdf

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