High speed switching IGBT JIAENSEMI JNG25T65FS1 650V 25A TO220F package for motor control applications

Key Attributes
Model Number: JNG25T65FS1
Product Custom Attributes
Pd - Power Dissipation:
41.7W
Td(off):
75ns
Td(on):
22ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
8pF
Input Capacitance(Cies):
978pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Pulsed Current- Forward(Ifm):
75A
Output Capacitance(Coes):
90pF
Reverse Recovery Time(trr):
60ns
Switching Energy(Eoff):
490uJ
Turn-On Energy (Eon):
660uJ
Mfr. Part #:
JNG25T65FS1
Package:
TO-220F
Product Description

Product Overview

JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. The JNG25T65FS1 features 650V, 25A, high-speed switching capabilities, and soft current turn-off waveforms, contributing to higher system efficiency.

Product Attributes

  • Brand: JIAEN
  • Model: JNG25T65FS1
  • Package: TO-220F

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Units
IGBT Electrical CharacteristicsBVCESVGE= 0V, IC= 250uA650--V
ICESVCE= 650V, VGE= 0V--100uA
IGESVGE=20V, VCE= 0V--±100nA
VGE(th)VGE= VCE, IC= 250uA5.1-6.9V
VCE(sat)VGE=15V, IC=25A-2.12.7V
QgVCC=480V VGE=15V IC=25A-31.2-nC
td(on)VCC=400V VGE=15V IC=25A RG=15Ω Inductive Load TC=25 °C-22-ns
trVCC=400V VGE=15V IC=25A RG=15Ω Inductive Load TC=25 °C-44-ns
Diode Electrical CharacteristicsVFIF=25A-1.653.0V
trrVCE = 400V IF= 25A Rg=15Ω-60-ns
IRRVCE = 400V IF= 25A Rg=15Ω-15.6-A
QrrVCE = 400V IF= 25A Rg=15Ω-518-nC
ErrVCE = 400V IF= 25A Rg=15Ω-0.49-mJ

2509021810_JIAENSEMI-JNG25T65FS1_C51484250.pdf

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