SCR device HXY MOSFET X0405 offering high dvdt rate and resistance to electromagnetic interference
Key Attributes
Model Number:
X0405
Product Custom Attributes
Holding Current (Ih):
3mA
Current - Gate Trigger(Igt):
90uA
Voltage - On State(Vtm):
1.6V
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
35A@50Hz
SCR Type:
1 SCR
Operating Temperature:
-40℃~+110℃
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
X0405
Package:
TO-252-2L
Product Description
Product Overview
The X0405 SCR series offers a high dv/dt rate and strong resistance to electromagnetic interference. These thyristors are specifically recommended for applications such as hair straighteners and igniters.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Origin: Shenzhen, China
- Material: Plastic-Encapsulate
- Website: www.hxymos.com
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Maximum Ratings | Tstg | -40~150 | ℃ | Storage junction temperature range |
| Tj | -40~110 | ℃ | Operating junction temperature range | |
| VDRM | 600 | V | Repetitive peak off-state voltage (Tj ) | |
| VRRM | 600 | V | Repetitive peak reverse voltage (Tj ) | |
| IT(RMS) | 4 | A | RMS on-state current | |
| ITSM | 35 | A | Non repetitive surge peak on-state current (full cycle, F=50Hz) | |
| VDRM | 600 | V | Repetitive peak off-state voltage (Tj ) | |
| Electrical Characteristics | IGT | 90 | mA | VD=12V, RL =100℆℆ |
| VGT | 0.8 | V | VD=12V, RL =100℆℆ | |
| VGD | 0.2 | V | VD=1/2VDRM RGK=1K℆ | |
| IH | - | mA | IT=100mA | |
| dV/dt | 20 | V/µs | VD=75%VDRM Tj=110℃ RGK=1K℆ | |
| VTM | 1.6 | V | IT=4A | |
| Ordering Information | Product ID | X0405 | - | - |
| Package | TO-252-2L | - | - | |
| Packing Method | Tape and Reel | 2500 | PCS |
Dimensions (TO-252-2L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | - | 0.483 TYP. | - | 0.190 TYP. |
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | - | 2.900 TYP. | - | 0.114 TYP. |
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | - | 1.600 TYP. | - | 0.063 TYP. |
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| Φ | 1.100 | 1.300 | 0.043 | 0.051 |
| θ | 0° | 8° | 0° | 8° |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | - | 5.350 TYP. | - | 0.211 TYP. |
2508121550_HXY-MOSFET-X0405_C50275356.pdf
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