switch mode power supply MOSFET Jilin Sino Microelectronics JCS15N60FH 220MF for electronic applications
Key Attributes
Model Number:
JCS15N60FH-220MF
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
520mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
-
Output Capacitance(Coss):
650pF
Input Capacitance(Ciss):
2.92nF
Pd - Power Dissipation:
53W
Gate Charge(Qg):
36nC
Mfr. Part #:
JCS15N60FH-220MF
Package:
TO-220F-3
Product Description
Product Overview
The JCS15N60H is a N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and UPS applications. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rdson-max (Vgs=10V) | Qg (nC) |
| JCS15N60CH-C-B | N/A | TO-220C | 15 | 600 | 0.52 (MAX) | 36.0 |
| JCS15N60FH-F-B | N/A | TO-220MF | 15 | 600 | 0.52 (MAX) | 36.0 |
| JCS15N60FH-F2-B | N/A | TO-220MF-K2 | 15 | 600 | 0.52 (MAX) | 36.0 |
| JCS15N60BH-B-B | N/A | TO-262 | 15 | 600 | 0.52 (MAX) | 36.0 |
| JCS15N60SH-S-B | JCS15N60SH-S-A | TO-263 | 15 | 600 | 0.52 (MAX) | 36.0 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 600 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.79 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=480V, TC=125 | - | - | 100 | A |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 3.0 | - | 5.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=7.5A, 25 | - | 0.45 | 0.52 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=7.5A, 100 | - | 0.79 | 1.10 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=7.5A, 150 | - | 1.17 | 1.70 | |
| Forward Transconductance | gfs | VDS = 40V, ID=7.5Anote 4 | - | 12.3 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 1000 | 2920 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 125 | 650 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 2.5 | 30 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=250V,ID=15A,RG=25 note 45 | - | 34 | 158 | ns |
| Turn-On rise time | tr | VDD=250V,ID=15A,RG=25 note 45 | - | 34 | 150 | ns |
| Turn-Off delay time | td(off) | VDD=250V,ID=15A,RG=25 note 45 | - | 70 | 345 | ns |
| Turn-Off Fall time | tf | VDD=250V,ID=15A,RG=25 note 45 | - | 20 | 100 | ns |
| Total Gate Charge | Qg | VDS =480V , ID=15A VGS =10V note 45 | - | 10 | 60.0 | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | - | 15 | A |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=15A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=15A dIF/dt=100A/s (note 4) | - | 250 | 1000 | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=15A dIF/dt=100A/s (note 4) | - | 2.5 | 16.0 | C |
| Parameter | Symbol | Value | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.51 | /W (For TO-220C/BH/SH) |
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.36 | /W (For TO-220MF) |
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.89 | /W (For TO-220MF-K2) |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | /W (For TO-220C/BH/SH/MF) |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 67.1 | /W (For TO-220MF-K2) |
2411201840_Jilin-Sino-Microelectronics-JCS15N60FH-220MF_C272559.pdf
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