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quality High Voltage NPN Transistor Infineon SMBTA42E6327 Featuring Low Collector Emitter Saturation Voltage factory
quality High Voltage NPN Transistor Infineon SMBTA42E6327 Featuring Low Collector Emitter Saturation Voltage factory

High Voltage NPN Transistor Infineon SMBTA42E6327 Featuring Low Collector Emitter Saturation Voltage

Key Attributes
Model Number: SMBTA42E6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
360mW
Transition Frequency(fT):
70MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
SMBTA42E6327
Package:
SOT-23-3
Product Description

Product Overview

The SMBTA42/MMBTA42 are NPN Silicon High-Voltage Transistors designed for various applications. They offer a low collector-emitter saturation voltage and are Pb-free (RoHS compliant). Complementary PNP types, SMBTA92/MMBTA92, are also available. These transistors are qualified according to AEC Q101 standards.

Product Attributes

  • Brand: Infineon Technologies
  • Package: SOT23
  • Certifications: AEC Q101, Pb-free (RoHS compliant)
  • Type Marking: s1D
  • Complementary Types: SMBTA92 / MMBTA92 (PNP)

Technical Specifications

ParameterSymbolValueUnitNotes
Collector-emitter voltageVCEO300V
Collector-base voltageVCBO300V
Emitter-base voltageVEBO6V
Collector currentIC500mA
Base currentIB100mA
Total power dissipationPtot360mWTS 74 C
Junction temperatureTj150C
Storage temperatureTstg-65 ... 150C
Junction - soldering point Thermal ResistanceRthJS 210K/WFor calculation of RthJA please refer to Application Note Thermal Resistance
Collector-emitter breakdown voltageV(BR)CEO300VIC = 1 mA, IB = 0
Collector-base breakdown voltageV(BR)CBO300VIC = 100 A, IE = 0
Emitter-base breakdown voltageV(BR)EBO6VIE = 100 A, IC = 0
Collector-base cutoff currentICBO-AVCB = 200 V, IE = 0; TA = 150 C: max 0.1 A
Emitter-base cutoff currentIEBO-nAVEB = 5 V, IC = 0; max 100 nA
DC current gainhFE25IC = 1 mA, VCE = 10 V; min
DC current gainhFE40IC = 10 mA, VCE = 10 V; typ
DC current gainhFE40IC = 30 mA, VCE = 10 V; max
Collector-emitter saturation voltageVCEsat-VIC = 20 mA, IB = 2 mA; max 0.5 V
Base emitter saturation voltageVBEsat-VIC = 20 mA, IB = 2 mA; max 0.9 V
Transition frequencyfT50MHzIC = 10 MHz, VCE = 20 V, f = 100 MHz; min
Transition frequencyfT70MHzIC = 10 MHz, VCE = 20 V, f = 100 MHz; typ
Collector-base capacitanceCcb-pFVCB = 20 V, f = 1 MHz; max 3 pF

2410121845_Infineon-SMBTA42E6327_C3196348.pdf

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