Silicon bipolar RF transistor Infineon BFP 181 E7764 optimized for broadband low noise amplification
Key Attributes
Model Number:
BFP 181 E7764
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
175mW
Transition Frequency(fT):
8GHz
Type:
-
Current - Collector(Ic):
20mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-
Mfr. Part #:
BFP 181 E7764
Package:
SOT-143
Product Description
Product Overview
The BFP181 is a low-noise silicon bipolar RF transistor designed for low-noise, high-gain broadband amplifiers. It operates at collector currents from 0.5 mA to 12 mA and features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This Pb-free (RoHS compliant) component is available with qualification reports according to AEC-Q101 and is ESD sensitive, requiring careful handling.
Product Attributes
- Brand: Infineon Technologies
- Package: SOT143
- Certifications: AEC-Q101
- Compliance: Pb-free (RoHS compliant)
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions | |
| Maximum Ratings | VCEO | 12 | V | ||
| VCES | 20 | V | |||
| VCBO | 20 | V | |||
| VEBO | 2 | V | |||
| IC | 20 | mA | |||
| Base current | IB | 2 | mA | ||
| Total power dissipation | Ptot | 175 | mW | TS 75 C | |
| Junction temperature | TJ | 150 | C | ||
| Storage temperature | TStg | -55 ... 150 | C | ||
| Thermal Resistance | RthJS | 430 | K/W | Junction - soldering point | |
| DC Characteristics | V(BR)CEO | 12 | V | IC = 1 mA, IB = 0 | |
| ICES | - | 100 | A | VCE = 20 V, VBE = 0 | |
| ICBO | - | 100 | nA | VCB = 10 V, IE = 0 | |
| IEBO | - | 1 | A | VEB = 1 V, IC = 0 | |
| hFE | 70 | 140 | - | IC = 5 mA, VCE = 8 V, pulse measured | |
| AC Characteristics | fT | 6 | 8 | GHz | IC = 10 mA, VCE = 8 V, f = 500 MHz |
| Ccb | - | 0.4 | pF | VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded | |
| Cce | - | 0.3 | - | VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded | |
| Ceb | - | 0.4 | - | VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded | |
| NFmin | - | 0.9 | dB | IC = 2 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz | |
| Gms | - | 21 | dB | IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz | |
| |S21e| | - | 17.5 | - | IC = 5 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz |
2410121743_Infineon-BFP-181-E7764_C534074.pdf
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