Low noise figure silicon bipolar RF transistor Infineon BFR182WH6327XTSA1 broadband amplifier device
Key Attributes
Model Number:
BFR182WH6327XTSA1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2V
Current - Collector Cutoff:
30nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
8GHz
Type:
NPN
Current - Collector(Ic):
35mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BFR182WH6327XTSA1
Package:
SOT-323
Product Description
Product Overview
The BFR182W is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates effectively at collector currents ranging from 1 mA to 20 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This component is available in a Pb-free and halogen-free package with visible leads, and a qualification report according to AEC-Q101 is available. It is an ESD-sensitive device and requires appropriate handling precautions.
Product Attributes
- Brand: Infineon Technologies
- Package Type: SOT323
- Certifications: AEC-Q101
- Compliance: Pb-free (RoHS compliant), Halogen-free
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Maximum Ratings | VCEO | 12 | V | |
| VCES | 20 | V | ||
| VCBO | 20 | V | ||
| VEBO | 2 | V | ||
| IC | 35 | mA | ||
| IB | 3 | mA | ||
| Ptot | 250 | mW | TS 90 C | |
| TJ | 150 | C | ||
| Thermal Resistance | RthJS | 240 | K/W | Junction - soldering point |
| TJ | 150 | C | Ambient temperature | |
| DC Characteristics | V(BR)CEO | 12 | V | IC = 1 mA, IB = 0 |
| ICES | 1 | nA | VCE = 15 V, VBE = 0, TA = 85 C | |
| ICBO | 30 | nA | VCB = 4 V, IE = 0 | |
| IEBO | 50 | nA | VEB = 1 V, IC = 0 | |
| hFE | 70-140 | - | IC = 10 mA, VCE = 8 V, pulse measured | |
| ICES | 70 | nA | VCE = 4 V, VBE = 0 | |
| AC Characteristics | fT | 6-8 | GHz | IC = 15 mA, VCE = 8 V, f = 500 MHz |
| Ccb | 0.34-0.5 | pF | VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded | |
| Cce | 0.26 | pF | VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded | |
| Ceb | 0.8 | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded | |
| NFmin | 0.9 | dB | IC = 3 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz | |
| Gms | 19 | dB | IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz | |
| Gma | 12.5 | dB | IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz |
2410121815_Infineon-BFR182WH6327XTSA1_C672187.pdf
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