Silicon Germanium Bipolar RF Transistor Infineon BFP650FH6327 Suitable for High Frequency RF Circuits
Key Attributes
Model Number:
BFP650FH6327
Product Custom Attributes
Current - Collector Cutoff:
500nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
46GHz
Type:
NPN
Current - Collector(Ic):
50mA
Collector - Emitter Voltage VCEO:
4.1V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BFP650FH6327
Package:
TSFP-4
Product Description
BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor
The BFP640FESD is a robust, low-noise silicon germanium bipolar RF transistor designed for various RF applications. It offers excellent performance characteristics suitable for demanding RF circuitry.
Product Attributes
- Brand: Infineon Technologies
- Material: Silicon Germanium (SiGe)
- Origin: Germany (Implied by publisher location)
Technical Specifications
| Parameter | Value | Conditions | Unit |
| Maximum Ratings | |||
| Collector-Emitter Voltage | 20 | V | |
| Collector-Base Voltage | 20 | V | |
| Emitter-Base Voltage | 5 | V | |
| Collector Current | 100 | mA | |
| Total Power Dissipation | 1.2 | Tamb = 25C | W |
| Storage Temperature | -65 to 150 | C | |
| Thermal Characteristics | |||
| Thermal Resistance Junction to Ambient | 104 | (calculated) | K/W |
| Thermal Resistance Junction to Case | 40 | (calculated) | K/W |
| Electrical Characteristics (Typical, unless otherwise specified) | |||
| Collector-Emitter Breakdown Voltage | 20 | IC = 1 mA, IB = 0 | V |
| Collector-Emitter Breakdown Voltage | 20 | IB = 10 A, IE = 0 | V |
| Emitter-Base Breakdown Voltage | 5 | IE = 1 mA, IC = 0 | V |
| Collector Cut-off Current | 0.01 | VCE = 20 V, VBE = 0 | A |
| Emitter Cut-off Current | 0.01 | VEB = 5 V, VCE = 0 | A |
| DC Current Gain (hFE) | 100 | VCE = 3 V, IC = 30 mA | |
| Transition Frequency (fT) | 65 | VCE = 3 V, IC = 30 mA, f = 1 GHz | GHz |
| Collector-Base Capacitance (CCB) | 0.6 | VCB = 10 V, f = 1 MHz | pF |
| Noise Figure (NFmin) | 0.6 | VCE = 3 V, IC = 6 mA, f = 1 GHz | dB |
| Noise Figure (NFmin) | 1.0 | VCE = 3 V, IC = 30 mA, f = 1 GHz | dB |
| Noise Figure (NF50) | 1.0 | VCE = 3 V, IC = 6 mA, f = 1 GHz, ZS = 50 | dB |
| Noise Figure (NF50) | 1.5 | VCE = 3 V, IC = 30 mA, f = 1 GHz, ZS = 50 | dB |
| 3rd Order Intercept Point (OIP3) | 38 | ZS = ZL = 50 , VCE = 3 V, IC = 30 mA, f = 1 GHz | dBm |
2410121513_Infineon-BFP650FH6327_C3198367.pdf
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