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quality Silicon Tuning Diode Infineon BBY6602VH6327XTSA1 for Mobile Communications Equipment VCO Applications factory
quality Silicon Tuning Diode Infineon BBY6602VH6327XTSA1 for Mobile Communications Equipment VCO Applications factory

Silicon Tuning Diode Infineon BBY6602VH6327XTSA1 for Mobile Communications Equipment VCO Applications

Key Attributes
Model Number: BBY6602VH6327XTSA1
Product Custom Attributes
Capacitance Ratio:
5.41@C1V/C4.5V
DC Reverse Voltage(Vr):
12V
Diode Configuration:
Independent
Diode Capacitance:
13.5pF@4.5V,1MHz
Mfr. Part #:
BBY6602VH6327XTSA1
Package:
SC-79-2
Product Description

Product Overview

The BBY66 series are Silicon Tuning Diodes designed for low tuning voltage operation in VCOs for mobile communications equipment. These hyperabrupt tuning diodes offer a high capacitance ratio, high Q, and low series resistance. Key advantages include a very low capacitance spread and Pb-free (RoHS compliant) packaging. The diodes are qualified according to AEC Q101 standards.

Product Attributes

  • Brand: Infineon Technologies
  • Material: Silicon
  • Compliance: Pb-free (RoHS compliant)
  • Qualification: AEC Q101

Technical Specifications

Model Type Package Configuration LS (nH) Marking
BBY66-02V Diode SC79 single 0.6 h O1s / O2s
BBY66-05 Diode SOT23 common cathode 1.8 OBs
BBY66-05W Diode SOT323 common cathode 1.4 OBs
Parameter Symbol Value Unit Notes
Maximum Ratings at TA = 25C, unless otherwise specified
Diode reverse voltage VR 12 V
Forward current IF 50 mA
Operating temperature range Top -55 ... 150 C
Storage temperature Tstg -55 ... 150 C
Electrical Characteristics at TA = 25C, unless otherwise specified
Reverse current IR - nA VR = 10 V, max. 20 nA
Reverse current IR - nA VR = 10 V, TA = 65 C, max. 200 nA
Diode capacitance CT 66 pF VR = 1 V, f = 1 MHz, min.
Diode capacitance CT 71.5 pF VR = 1 V, f = 1 MHz, max.
Diode capacitance CT 33 pF VR = 2 V, f = 1 MHz, min.
Diode capacitance CT 38 pF VR = 2 V, f = 1 MHz, max.
Diode capacitance CT 19.7 pF VR = 3 V, f = 1 MHz, min.
Diode capacitance CT 22.2 pF VR = 3 V, f = 1 MHz, max.
Diode capacitance CT 12 pF VR = 4.5 V, f = 1 MHz, min.
Diode capacitance CT 13.5 pF VR = 4.5 V, f = 1 MHz, max.
Capacitance ratio CT1/CT4.5 5 - VR = 1 V, VR = 4.5 V, min.
Capacitance ratio CT1/CT4.5 5.41 - VR = 1 V, VR = 4.5 V, typ.
Series resistance rS - VR = 1 V, f = 470 MHz, typ. 0.25
Series resistance rS 0.4 VR = 1 V, f = 470 MHz, max.
Capacitance Group C1V min C1V max
01 66 pF 69 pF
02 (only BBY66-05) 68.5 pF 71.5 pF

2410121819_Infineon-BBY6602VH6327XTSA1_C7466801.pdf

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