Pb Free Silicon Tuning Diode Infineon BBY 55-03W E6327 with Low Series Resistance and High Linearity

Key Attributes
Model Number: BBY 55-03W E6327
Product Custom Attributes
Capacitance Ratio:
2.5@C2V/C10V
DC Reverse Voltage(Vr):
16V
Diode Configuration:
Independent
Series Resistance (Rs):
150mΩ
Diode Capacitance:
6.5pF@10V,1MHz
Mfr. Part #:
BBY 55-03W E6327
Package:
SOD-323
Product Description

Product Overview

The BBY55 series are Silicon Tuning Diodes designed for low tuning voltage operation in VCOs for mobile communications equipment. These hyperabrupt tuning diodes offer excellent linearity, high Q, and low series resistance. They are available in packages with very low capacitance spread and are Pb-free (RoHS compliant).

Product Attributes

  • Brand: Infineon Technologies
  • Compliance: Pb-free (RoHS compliant)

Technical Specifications

Model Type Package Configuration LS (nH) Marking
BBY55-02V Tuning Diode SC79 single 0.6 77 white
BBY55-02W Tuning Diode SCD80 single 0.6 7
BBY55-03W Tuning Diode SOD323 single 1.8 7
Parameter Symbol Value Unit Condition
Diode reverse voltage VR 16 V TA = 25C
Forward current IF 20 mA TA = 25C
Operating temperature range Top -55 ... 150 C
Storage temperature Tstg -55 ... 150 C
Reverse current IR - nA VR = 15 V, TA = 25C
Reverse current IR - 100 nA VR = 15 V, TA = 85C
Diode capacitance CT 17.5 - 19.6 pF VR = 1 V, f = 1 MHz
Diode capacitance CT 14 - 16 pF VR = 2 V, f = 1 MHz
Diode capacitance CT 11.6 - 13.6 pF VR = 3 V, f = 1 MHz
Diode capacitance CT 10 - 12 pF VR = 4 V, f = 1 MHz
Diode capacitance CT 5.5 - 6.5 pF VR = 10 V, f = 1 MHz
Capacitance ratio CT2/CT10 2 - 3 VR = 2 V, VR = 10 V, f = 1 MHz
Series resistance rS - 0.4 VR = 5 V, f = 470 MHz
Series resistance rS - 0.15 VR = 5 V, f = 470 MHz

2411220122_Infineon-BBY-55-03W-E6327_C533701.pdf

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