High Capacitance Ratio Silicon Variable Capacitance Diode Infineon BB565E7902 for UHF TV Tuner Circuits
Key Attributes
Model Number:
BB565E7902
Product Custom Attributes
Capacitance Ratio:
11@C1V/C28V
Diode Configuration:
Independent
DC Reverse Voltage(Vr):
30V
Diode Capacitance:
2.2pF@28V,1MHz
Mfr. Part #:
BB565E7902
Package:
SCD-80
Product Description
Product Overview
The BB545/BB565 series are Silicon Variable Capacitance Diodes designed for UHF-TV tuners. These diodes offer a high capacitance ratio, low series inductance, and low series resistance. They are manufactured using an "in-line" matching assembly procedure, ensuring excellent uniformity and matching. The components are Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon Technologies
- Material: Silicon
- Compliance: Pb-free (RoHS compliant)
Technical Specifications
| Model | Package | Configuration | LS (nH) | Marking |
|---|---|---|---|---|
| BB545 | SOD323 | single | 1.8 | white U |
| BB565 | SCD80 | single | 0.6 | CC |
| BB565-02V | SC79 | single | 0.6 | C |
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Maximum Ratings at TA = 25C, unless otherwise specified | |||
| Diode reverse voltage | VR | 30 | V |
| Peak reverse voltage (R 5k) | VRM | 35 | V |
| Forward current | IF | 20 | mA |
| Operating temperature range | Top | -55 ... 150 | C |
| Storage temperature | Tstg | -55 ... 150 | C |
| Electrical Characteristics at TA = 25C, unless otherwise specified | |||
| Reverse current (VR = 30 V) | IR | - | nA |
| Reverse current (VR = 30 V, TA = 85 C) | IR | - | 200 nA |
| Diode capacitance (VR = 1 V, f = 1 MHz) | CT | 18.5 | pF |
| Diode capacitance (VR = 1 V, f = 1 MHz) | CT | 20 | pF |
| Diode capacitance (VR = 1 V, f = 1 MHz) | CT | 21.5 | pF |
| Diode capacitance (VR = 2 V, f = 1 MHz) | CT | 13.2 | pF |
| Diode capacitance (VR = 2 V, f = 1 MHz) | CT | 14.8 | pF |
| Diode capacitance (VR = 2 V, f = 1 MHz) | CT | 16.4 | pF |
| Diode capacitance (VR = 25 V, f = 1 MHz) | CT | 1.85 | pF |
| Diode capacitance (VR = 25 V, f = 1 MHz) | CT | 2.07 | pF |
| Diode capacitance (VR = 25 V, f = 1 MHz) | CT | 2.28 | pF |
| Diode capacitance (VR = 28 V, f = 1 MHz) | CT | 1.8 | pF |
| Diode capacitance (VR = 28 V, f = 1 MHz) | CT | 2 | pF |
| Diode capacitance (VR = 28 V, f = 1 MHz) | CT | 2.2 | pF |
| Capacitance ratio (VR = 1 V, VR = 28 V, f = 1 MHz) | CT1/CT28 | 9 | - |
| Capacitance ratio (VR = 1 V, VR = 28 V, f = 1 MHz) | CT1/CT28 | 10 | - |
| Capacitance ratio (VR = 1 V, VR = 28 V, f = 1 MHz) | CT1/CT28 | 11 | - |
| Capacitance ratio (VR = 2 V, VR = 25 V, f = 1 MHz) | CT2/CT25 | 6.3 | - |
| Capacitance ratio (VR = 2 V, VR = 25 V, f = 1 MHz) | CT2/CT25 | 7.2 | - |
| Capacitance ratio (VR = 2 V, VR = 25 V, f = 1 MHz) | CT2/CT25 | 8.1 | - |
| Capacitance matching (VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB545) | CT/CT | - | 0.5 % |
| Capacitance matching (VR = 1V to 28V, f = 1 MHz, 4 diodes sequence, BB565/-02V) | CT/CT | - | 0.7 % |
| Capacitance matching (VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB565/-02V) | CT/CT | - | 2.5 % |
| Capacitance matching (VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB565/-02V) | CT/CT | - | 1.5 % |
| Series resistance (VR = 3 V, f = 470 MHz) | rS | 0.6 | |
| Series inductance | LS | 0.6 | nH |
1) For details please refer to Application Note 047
2411200037_Infineon-BB565E7902_C3272573.pdf
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