Voltage controlled oscillator tuning diode Infineon BBY 56-02V H6327 with Pb free package compliance

Key Attributes
Model Number: BBY 56-02V H6327
Product Custom Attributes
Capacitance Ratio:
3.3@C1V/C4V
Diode Configuration:
Independent
DC Reverse Voltage(Vr):
10V
Series Resistance (Rs):
-
Diode Capacitance:
12.1pF@4V,1MHz
Mfr. Part #:
BBY 56-02V H6327
Package:
SC-79
Product Description

Product Overview

The BBY56 series is a range of silicon tuning diodes designed for low tuning voltage operation in Voltage Controlled Oscillators (VCOs) within mobile communications equipment. These diodes offer excellent linearity and low series resistance, along with a very low capacitance spread. They are available in Pb-free (RoHS compliant) packages.

Product Attributes

  • Compliance: Pb-free (RoHS compliant)

Technical Specifications

Model Package Configuration Marking Diode Reverse Voltage (VR) Max Forward Current (IF) Max Operating Temperature Range Storage Temperature Range Reverse Current (IR) at VR=6V, TA=25C (Max) Reverse Current (IR) at VR=6V, TA=85C (Typ) Diode Capacitance (CT) at VR=1V, f=1MHz (Typ) Diode Capacitance (CT) at VR=2V, f=1MHz (Typ) Diode Capacitance (CT) at VR=3V, f=1MHz (Typ) Diode Capacitance (CT) at VR=4V, f=1MHz (Typ) Capacitance Ratio (CT1/CT3) at VR=1V/3V, f=1MHz (Typ) Capacitance Ratio (CT1/CT4) at VR=1V/4V, f=1MHz (Typ) Series Resistance (rS) at VR=1V, f=470MHz (Typ)
BBY56-02V SC79 single 9 10 V 20 mA -55 ... 150 C -55 ... 150 C - nA 5 nA 37 pF 22 pF 14.8 pF 12.1 pF 2.15 3.3 0.25
BBY56-02W* SCD80 single 66 10 V 20 mA -55 ... 150 C -55 ... 150 C - nA 5 nA 37 pF 22 pF 14.8 pF 12.1 pF 2.15 3.3 0.25
BBY56-03W SOD323 single red 10 V 20 mA -55 ... 150 C -55 ... 150 C - nA 100 nA 40 pF 25 pF 16.8 pF - pF 2.53 - 0.25

*Not for new design


2411220607_Infineon-BBY-56-02V-H6327_C533702.pdf

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