Silicon PNP Transistor ISC 2SA1744 Ideal for in DC DC Converters and High Speed Switching Circuits
Key Attributes
Model Number:
2SA1744
Product Custom Attributes
Mfr. Part #:
2SA1744
Package:
TO-220F
Product Description
Product Overview
The ISC 2SA1744 is a Silicon PNP Power Transistor designed for high-speed switching applications. It features high DC current gain (hFE) at low saturation voltage (VCE(sat)), making it ideal for use as a driver in DC/DC converters and actuators. Its robust performance and reliable operation are further enhanced by minimum lot-to-lot variations.
Product Attributes
- Brand: ISC
- Trademark: ISC & ISCsemi
- Origin: Silicon
- Material: Silicon
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-Emitter Sustaining Voltage | VCEO(SUS) | VCEO(SUS)= -60V(Min) | -60 | V |
| IC= -8.0A ; IB= -0.8A, L= 1mH | -60 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC= -8A; IB= -0.4A | -0.3 | V |
| IC= -12A; IB= -0.6A | -0.5 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat) | IC= -8A; IB= -0.4A | -1.2 | V |
| IC= -12A; IB= -0.6A | -1.5 | V | ||
| Collector Cutoff Current | ICBO | VCB= -60V ; IE=0 | -10 | A |
| Emitter Cutoff Current | IEBO | VEB= -5V; IC=0 | -10 | A |
| DC Current Gain | hFE | IC= -1.5A; VCE= -2V | 100 | |
| IC= -3.0A; VCE= -2V | 100-400 | |||
| IC= -8.0A; VCE= -2V | 60 | |||
| Collector-Base Voltage | VCBO | -100 | V | |
| Collector-Emitter Voltage | VCEO | -60 | V | |
| Emitter-Base Voltage | VEBO | -7.0 | V | |
| Collector Current-Continuous | IC | -15 | A | |
| Collector Current-Pulse | ICM | -30 | A | |
| Base Current-Continuous | IB | -7.5 | A | |
| Total Power Dissipation | PT | @TC=25 | 30 | W |
| @Ta=25 | 2.0 | W | ||
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | Tstg | -55~150 |
2411220332_ISC-2SA1744_C491428.pdf
Related Products
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
