NPN Silicon Power Transistor ISC 2N4923 Offering Minimum Lot to Lot Variations for Circuit Operation
Key Attributes
Model Number:
2N4923
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100uA
Pd - Power Dissipation:
30W
Transition Frequency(fT):
3MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
80V
Mfr. Part #:
2N4923
Package:
TO-126
Product Description
ISC Silicon NPN Power Transistor 2N4923
The ISC 2N4923 is a Silicon NPN Power Transistor designed for driver circuits, switching, and amplifier applications. It features a Collector-Emitter Sustaining Voltage of 80V (Min), a low Collector Saturation Voltage of 0.6V (Max.) at IC=1A, and a wide Area of Safe Operation. It is a complement to the 2N4920 type, offering minimum lot-to-lot variations for robust device performance and reliable operation.
Product Attributes
- Brand: ISC
- Trademark: ISC & ISCsemi
- Origin: Not specified
- Material: Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ. | Max | Unit |
| VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 50mA; IB= 0 | 80 | V | ||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC= 1A; IB= 0.1A | 0.6 | V | ||
| VBE(sat) | Base-Emitter Saturation Voltage | IC= 1A; IB= 0.1A | 1.3 | V | ||
| VBE(on) | Base-Emitter On Voltage | IC= 1A ; VCE= 1V | 1.3 | V | ||
| ICEX | Collector Cutoff Current | VCE=80V;VBE(off)= -1.5V | 0.1 | mA | ||
| ICEX | Collector Cutoff Current | VCE=80V;VBE(off)= -1.5V;TC=125 | 0.5 | mA | ||
| ICEO | Collector Cutoff Current | VCE= 40V; IB= 0 | 0.5 | mA | ||
| ICBO | Collector Cutoff Current | VCB= 80V; IE= 0 | 0.1 | mA | ||
| IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 | 1.0 | mA | ||
| hFE-1 | DC Current Gain | IC= 50mA ; VCE= 1V | 40 | |||
| hFE-2 | DC Current Gain | IC= 500mA ; VCE= 1V | 30 | 150 | ||
| hFE-3 | DC Current Gain | IC= 1A ; VCE= 1V | 10 | |||
| fT | Current-GainBandwidth Product | IC= 0.25A;VCE= 10V, ftest= 1MHz | 3 | MHz | ||
| COB | Output Capacitance | IE= 0;VCB= 10V; ftest= 100kHz | 100 | pF |
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 80 | V |
| VCEO | Collector-Emitter Voltage | 80 | V |
| VEBO | Emitter-Base Voltage | 5 | V |
| IC | Collector Current-Continuous | 1 | A |
| ICM | Collector Current-Peak | 3 | A |
| IB | Collector Current-Continuous | 1 | A |
| PC | Collector Power Dissipation @ TC=25 | 30 | W |
| TJ | Junction Temperature | 150 | |
| Tstg | Storage Temperature Range | -65~150 |
| Symbol | Parameter | Max | Unit |
| Rth j-c | Thermal Resistance,Junction to Case | 4.16 | /W |
2411220255_ISC-2N4923_C2976464.pdf
Related Products
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
