Jilin Sino Microelectronics JCS10N60FT N channel MOSFET transistor with low Crss and RoHS compliance
Key Attributes
Model Number:
JCS10N60FT
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
9.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
750mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
38pF
Number:
-
Output Capacitance(Coss):
260pF
Input Capacitance(Ciss):
1.9nF
Pd - Power Dissipation:
59.8W
Gate Charge(Qg):
37.2nC@10V
Mfr. Part #:
JCS10N60FT
Package:
TO-220MF
Product Description
Product Overview
The JCS10N60T is a N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies and electronic lamp ballasts. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
- Origin: China
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rds(on) (@Vgs=10V) () | Qg (nC) |
| JCS10N60BT-B-B | N/A | TO-262 | 9.5 | 600 | 0.75 | 37.2 |
| JCS10N60ST-S-B | N/A | TO-263 | 9.5 | 600 | 0.75 | 37.2 |
| JCS10N60CT-C-B | N/A | TO-220C | 9.5 | 600 | 0.75 | 37.2 |
| JCS10N60FT-F-B | N/A | TO-220MF | 9.5 | 600 | 0.75 | 37.2 |
| JCS10N60FT-F2-B | N/A | TO-220MF-K2 | 9.5 | 600 | 0.75 | 37.2 |
2411201842_Jilin-Sino-Microelectronics-JCS10N60FT_C2693303.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
