Low Crss MOSFET Jilin Sino Microelectronics JCS2N65RC DPAK designed for switching power applications
Key Attributes
Model Number:
JCS2N65RC-DPAK
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
-
Input Capacitance(Ciss):
550pF
Output Capacitance(Coss):
80pF
Pd - Power Dissipation:
44W
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
JCS2N65RC-DPAK
Package:
DPAK
Product Description
Product Overview
The JCS2N65C is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
- Origin: China
Technical Specifications
| Order Codes | Marking | Package | ID (A) | VDSS (V) | Rds(on)_max () (Vgs=10V) | Qg-typ (nC) |
| JCS2N65TC-T-A / JCS2N65TC-T-AR | 2N65T | TO-92 | 2.0 | 650 | 5.5 | 8.4 |
| JCS2N65VC-V-B / JCS2N65VC-V-BR | N/A | IPAK | 2.0 | 650 | 5.5 | 8.4 |
| JCS2N65RC-R-B / JCS2N65RC-R-BR / JCS2N65RC-R-A / JCS2N65RC-R-AR | JCS2N65R | DPAK | 2.0 | 650 | 5.5 | 8.4 |
| JCS2N65CC-C-B / JCS2N65CC-C-BR | N/A | TO-220C | 2.0 | 650 | 5.5 | 8.4 |
| JCS2N65FC-F-B / JCS2N65FC-F-BR | N/A | TO-220MF | 2.0 | 650 | 5.5 | 8.4 |
| JCS2N65FC-F2-B / JCS2N65FC-F2-BR | N/A | TO-220MF-K2 | 2.0 | 650 | 5.5 | 8.4 |
Absolute Maximum Ratings (Tc=25)
| Parameter | Symbol | JCS2N65 VC/RC | JCS2N65 CC | JCS2N65 FC | JCS2N65FC (220MF/K2) | JCS2N65 TC | Unit |
| Drain-Source Voltage | VDSS | 650 | 650 | 650 | 650 | 650 | V |
| Drain Current-continuous (Tc=25) | ID | 2.0* | 2.0* | 2.0* | 2.0* | 2.0* | A |
| Drain Current-continuous (Tc=100) | ID | 1.3* | 1.3* | 1.3* | 1.3* | 1.3* | A |
| Drain Current pulse (note 1) | IDM | 8.0* | 8.0* | 8.0* | 8.0* | 8.0* | A |
| Gate-Source Voltage | VGSS | 30 | V | ||||
| Single Pulsed Avalanche Energy (note 2) | EAS | 207 | mJ | ||||
| Avalanche Current (note 1) | IAR | 1.9 | A | ||||
| Repetitive Avalanche Current (note 1) | EAR | 4.2 | mJ | ||||
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 4.6 | V/ns | ||||
| Power Dissipation (Tc=25) | PD | 44 | 54 | 38.8 | 34.06 | 130.2 | W |
| Power Dissipation -Derate above 25 | PD | 0.35 | 0.43 | 0.31 | 0.272 | 1.04 | W/ |
| Operating and Storage Temperature Range | TJ, TBSTG | -55+150 | |||||
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 650 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/TJ | ID=1mA, referenced to 25 | - | 0.65 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=520V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=1.0A, 25 | - | 4.0 | 5.5 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=1.0A, 100 | - | 7.0 | 10.0 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=1.0A, 150 | - | 10.4 | 14.0 | |
| Forward Transconductance | gfs | VDS = 40V , ID=1.0A (note 4) | - | 2.45 | - | S |
| Gate resistance | Rg | F=1.0MHZ open drain VDS=25V, VGS=0V, f=1.0MHBZ | 1.0 | - | 7.5 | |
| Input capacitance | Ciss | - | - | 313 | 550 | pF |
| Output capacitance | Coss | - | - | 31.2 | 80 | pF |
| Reverse transfer capacitance | Crss | - | 0.2 | 3.65 | 10 | pF |
| Turn-On delay time | td(on) | VDD=325V,ID=2.0A,RG=25 (note 4,5) | - | 20.3 | 50 | ns |
| Turn-On rise time | tr | - | - | 145 | 220 | ns |
| Turn-Off delay time | td(off) | - | - | 33.3 | 80 | ns |
| Turn-Off Fall time | tf | - | - | 11.8 | 45 | ns |
| Total Gate Charge | Qg | VDS =520V , ID=2.0A VGS =10V (note 4,5) | - | 8.4 | 18 | nC |
| Gate-Source charge | Qgs | - | - | 1.6 | 4.0 | nC |
| Gate-Drain charge | Qgd | - | - | 3.1 | 10 | nC |
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | - | 1.9 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | - | 8.0 | A |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=2.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=2.0A dIF/dt=100A/s (note 4) | - | 284 | 600 | ns |
| Reverse recovery charge | Qrr | - | - | 1.08 | 3.0 | C |
Thermal Characteristics
| Parameter | Symbol | JCS2N65 VC/RC | JCS2N65 CC | JCS2N65 FC | JCS2N65FC (220MF/K2) | JCS2N65 TC | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.87 | 2.32 | 3.22 | 3.67 | 0.96 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 110 | 40.25 | 39.68 | 47.33 | 120 | /W |
2411201841_Jilin-Sino-Microelectronics-JCS2N65RC-DPAK_C272584.pdf
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