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quality Jilin Sino-Microelectronics SPE10M25T-C IPM Featuring 500V VDSS and 10A IDM for Industrial Power Electronics factory
quality Jilin Sino-Microelectronics SPE10M25T-C IPM Featuring 500V VDSS and 10A IDM for Industrial Power Electronics factory

Jilin Sino-Microelectronics SPE10M25T-C IPM Featuring 500V VDSS and 10A IDM for Industrial Power Electronics

Key Attributes
Model Number: SPE10M25T-C
Product Custom Attributes
Mfr. Part #:
SPE10M25T-C
Package:
SOP23-FP
Product Description

Intelligent Power Module (IPM) - SPE10M25T-C

The SPE10M25T-C is an Intelligent Power Module (IPM) designed for high-efficiency power conversion in various applications. It features integrated protection functions and a high-level valid signal compatible with 3.3V and 5V MCUs. The module offers a lower arm MOSFET source output, built-in bootstrap diode, anti-shoot-through protection, undervoltage protection, and internal temperature detection output. It boasts an isolation voltage of 1500V.

Applications

  • Refrigerator compressor
  • Lampblack machine
  • Electric fan
  • Air purifier
  • Dishwasher pump

Product Features

  • Signal high level valid, compatible with 3.3V and 5V MCUs
  • Lower arm MOSFET source electrode output
  • Built-in bootstrap diode
  • Built-in straight through protection
  • Built-in undervoltage protection
  • Internal integrated temperature detection output
  • Resistant to high voltage 1500V

Product Information

Order Number: SPE10M25T-C
Marking: SPE10M25T-C
Package: SOP23-FP
Main Characteristics: 500V/5A 3 Phase Full Bridge Drive
VDSS: 250V
ID: 5A
IDM: 10A
VISO: 1500V

Technical Specifications

Parameter Symbol Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
Drain-Source Voltage of Each MOSFET VDSS / - - 250 V
Each MOSFET Current, Continuous ID Tc=25 - - 5 A
Each MOSFET Pulse Current, Peak IDM Tc=25, pulse width < 100us - - 10 A
Maximum Power Dissipation (For Each MOSFET) PD Tc=25 - - 12 W
Control Supply Voltage (VCC-COM) VCC Applied between VCC and COM - - 20 V
High-side Bias Voltage (VB-VS) VBS Applied between VB and VS - - 20 V
Input Signal Voltage (VIN-COM) VIN Applied between VIN and COM -0.3 - VCC+0.3 V
Bootstrap Diode Reverse Breakdown Voltage VRRMB / - - 500 V
Bootstrap Diode Forward Current IFB TC=25 - - 0.5 A
Bootstrap Diode Forward Current, Peak IFPB TC=25, pulse width < 1mS - - 1 A
Operating Junction Temperature Tj / -40 - 150
Storage Temperature TSTG / -40 - 125
Isolation Voltage VISO 60Hz, sinusoidal, AC 1 min, between pins and heat-sink plate - - 1500 V
Thermal Resistance
Junction to Case Thermal Resistance (For Each MOSFET) Rth(j-c) / - 10.5 - /W
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VIN=0V, ID=1mA 250 - - V
Zero Gate Voltage Drain Current IDSS VIN=0V, VDS=250V - - 1 mA
Drain-Source Diode Forward Voltage VSD VCC=VBS=15V, VIN=0V, ID=-5A - 1.1 - V
Drain-Source Turn-On Resistance RDS(on) VCC=VBS=15V, VIN=5V, ID=5A - - 0.5 ohm
Switching Time ON tON VPN=150V, VCC=VBS=15V, ID=2.4A, VIN=0/5V, Inductive Load L=3mH - 650 - nS
Switching Time OFF tOFF VPN=150V, VCC=VBS=15V, ID=2.4A, VIN=0/5V, Inductive Load L=3mH - 590 - nS
VCC Quiescent Supply Current IQCC VCC=15V, VIN=5V - - 600 uA
VBS Quiescent Supply Current IQB VDB=15V, VIN=5V - - 210 uA
Low-Side Under-Voltage Protection Detection Level UVCCD VCC-COM 7.2 8 9.4 V
High-Side Under-Voltage Protection Detection Level UVBSD VBS 7.2 8 9.4 V
HVIC Temperature Sensing Voltage Output VTS VCC=15V, THVIC=25 0.6 0.85 1.1 V
Input ON Threshold Voltage VIH Logic HIGH Level, Applied between VIN and COM - - 2.9 V
Input OFF Threshold Voltage VIL Logic Low Level, Applied between VIN and COM 0.8 - - V
BSD Forward voltage VF(BSD) IF=0.1A, TC=25 - 4.5 8 V
Recommended Operating Conditions
Supply Voltage VPN Applied between P and N - 150 200 V
Control Supply Voltage VCC VCC-COM 13.5 15.0 16.5 V
High-Side Bias Voltage VBS VB-VS 13.5 15.0 16.5 V
Input ON Threshold Voltage VIN(ON) Applied between VIN and COM 3.0 - VCC V
Input OFF Threshold Voltage VIN(OFF) Applied between VIN and COM 0 - 0.6 V
Blanking Time for Preventing Arm-Short tdead VCC=VBS=13.5~16.5V, Tj150 1.0 - - us
PWM Switching Frequency FPWM Tj150 - 15 - KHz

2411201852_Jilin-Sino-Microelectronics-SPE10M25T-C_C6917309.pdf

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