Power MOSFET Jilin Sino Microelectronics JCS4N65FC 220MF for high frequency LED and ballast supplies
Key Attributes
Model Number:
JCS4N65FC-220MF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
RDS(on):
2.6Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Input Capacitance(Ciss):
810pF
Output Capacitance(Coss):
100pF
Pd - Power Dissipation:
38.8W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
JCS4N65FC-220MF
Package:
TO-220F-3
Product Description
Product Overview
The JCS4N65C series is a range of high-performance N-channel MOSFETs designed for demanding power applications. Featuring low gate charge, low Crss, and fast switching speeds, these devices are 100% avalanche tested and offer improved dv/dt capability. They are suitable for high-frequency switching mode power supplies, electronic ballasts, and LED power supplies.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Codes | Marking | Package | Main Characteristics (ID, VDSS, Rds(on)) | Typical Qg | Applications |
| JCS4N65VC-V-B, JCS4N65VC-V-BR | JCS4N65V | IPAK | ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6 | 14nC | High frequency switching mode power supply, Electronic ballast, LED power supply |
| JCS4N65RC-R-B, JCS4N65RC-R-BR, JCS4N65RC-R-A, JCS4N65RC-R-AR | JCS4N65R | DPAK | ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6 | 14nC | High frequency switching mode power supply, Electronic ballast, LED power supply |
| JCS4N65CC-C-B, JCS4N65CC-C-BR | JCS4N65C | TO-220C | ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6 | 14nC | High frequency switching mode power supply, Electronic ballast, LED power supply |
| JCS4N65FC-F-B, JCS4N65FC-F-BR | JCS4N65F | TO-220MF | ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6 | 14nC | High frequency switching mode power supply, Electronic ballast, LED power supply |
| JCS4N65FC-F2-B, JCS4N65FC-F2-BR | JCS4N65F | TO-220MF-K2 | ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6 | 14nC | High frequency switching mode power supply, Electronic ballast, LED power supply |
| JCS4N65FC-F4-B, JCS4N65FC-F4-BR | JCS4N65F | TO-220MF-K4 | ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6 | 14nC | High frequency switching mode power supply, Electronic ballast, LED power supply |
| JCS4N65BC-B-B, JCS4N65BC-B-BR | JCS4N65B | TO-262 | ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6 | 14nC | High frequency switching mode power supply, Electronic ballast, LED power supply |
| JCS4N65MC-M-B, JCS4N65MC-M-BR | JCS4N65M | TO-126-K1 | ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6 | 14nC | High frequency switching mode power supply, Electronic ballast, LED power supply |
| JCS4N65MFC-MF-B, JCS4N65MFC-MF-BR | JCS4N65MF | TO-126F | ID: 4.0A, VDSS: 650V, Rds(on) Typ: 2.1 Max: 2.6 | 14nC | High frequency switching mode power supply, Electronic ballast, LED power supply |
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 650 | V |
| Continuous Drain Current (Tj=25) | ID | 4.0* | A |
| Continuous Drain Current (Tj=100) | ID | 3.2* | A |
| Gate-Source Voltage | VGSS | 30 | V |
| Single Pulsed Avalanche Energy | EAS | 256 | mJ |
| Avalanche Current | IAR | 4.0 | A |
| Peak Diode Recovery dv/dt | dv/dt | 5.5 | V/ns |
| Power Dissipation (TC=25) | PD | 122-138 | W |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | |
| Gate Threshold Voltage | VGS(th) | 2.0 - 4.0 | V |
| Static Drain-Source On-Resistance (VGS=10V, ID=2.0A, 25) | RDS(ON) | 2.1 - 2.6 | |
| Forward Transconductance (VDS=40V, ID=2.0A) | gfs | 4.5 | S |
| Input capacitance | Ciss | 200 - 810 | pF |
| Output capacitance | Coss | 20 - 100 | pF |
| Reverse transfer capacitance | Crss | 1 - 10 | pF |
| Total Gate Charge | Qg | 14 - 22 | nC |
| Drain-Source Diode Forward Voltage (IS=4.0A) | VSD | - 1.4 | V |
| Reverse recovery time | trr | 280 - 800 | ns |
| Reverse recovery charge | Qrr | 2.0 - 6.8 | C |
2409280002_Jilin-Sino-Microelectronics-JCS4N65FC-220MF_C272523.pdf
Related Products
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
