Switching diode silicon epitaxial planar JingYang BAV23SX high voltage component designed for electronic
Key Attributes
Model Number:
BAV23SX
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA@200V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-65℃~+150℃
Voltage - DC Reverse (Vr) (Max):
200V
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
400mA
Mfr. Part #:
BAV23SX
Package:
SOT-23
Product Description
Product Overview
High voltage switching diodes designed for various applications. These silicon epitaxial planar diodes offer reliable performance in demanding switching scenarios.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon Epitaxial Planar
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Part Number | VRRM (V) | VR (V) | IF(AV) (mA) | IFRM (mA) | IFSM (A) | Ptot (mW) | RJA (OC/W) | Tj, Tstg (OC) | V(BR)R (V) | VF at IF=100mA (V) | VF at IF=200mA (V) | IR at VR=200V, Tj=25OC (nA) | IR at VR=200V, Tj=150OC (A) | Ctot at VR=0V, f=1MHz (pF) | trr (ns) |
| BAV23 | 250 | 200 | 400 | 625 | 1.7 (10ms), 3 (100s), 9 (1s) | 350 | 357 | -65 to +150 | 250 | - | 1 | - | 100 | 5 | 50 |
| BAV23A | 250 | 200 | 400 | 625 | 1.7 (10ms), 3 (100s), 9 (1s) | 350 | 357 | -65 to +150 | 250 | - | 1 | - | 100 | 5 | 50 |
| BAV23C | 250 | 200 | 400 | 625 | 1.7 (10ms), 3 (100s), 9 (1s) | 350 | 357 | -65 to +150 | 250 | - | 1.25 | - | 100 | 5 | 50 |
| BAV23S | 250 | 200 | 400 | 625 | 1.7 (10ms), 3 (100s), 9 (1s) | 350 | 357 | -65 to +150 | 250 | 1 | - | - | 100 | 5 | 50 |
2209151800_JingYang-BAV23SX_C5156718.pdf
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